Simulation of a stress-strain state in thin structured gallium nitride films on sapphire substrates

Ivukin I.N.; Artemev D.M.; Bugrov V.E.; Odnoblyudov M.A.; Romanov A.E.

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Simulation of a stress-strain state in thin structured gallium nitride films on sapphire substrates

机译：蓝宝石衬底上结构化氮化镓薄膜中应力-应变状态的模拟

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The stress-strain state in thin structured gallium nitride films on sapphire substrates containing open pores has been simulated. The results have been obtained by the finite element method in the commercial program complex. The stress intensity factor K_I has been calculated for the model considering a crack at the GaN/sapphire interface near an open pore. Based on the calculations of elastic fields, the redistribution of stresses by a structure with an ordered array of open pores in gallium nitride films has been estimated.

机译：模拟了蓝宝石衬底上含有开放孔的氮化镓薄膜的应力应变状态。结果已通过商业程序组合中的有限元方法获得。考虑到在开孔附近的GaN /蓝宝石界面处的裂纹，已经为模型计算了应力强度因子K_I。基于弹性场的计算，已经估计了氮化镓膜中具有规则排列的开孔阵列的结构所引起的应力重新分布。

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《Physics of the solid state》 |2012年第12期|共4页
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Ivukin I.N.; Artemev D.M.; Bugrov V.E.; Odnoblyudov M.A.; Romanov A.E.;
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中图分类固体物理学;
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1. Simulation of a stress-strain state in thin structured gallium nitride films on sapphire substrates [J] . Ivukin I.N., Artemev D.M., Bugrov V.E., Physics of the solid state . 2012,第12期

机译：蓝宝石衬底上结构化氮化镓薄膜中应力-应变状态的模拟
2. Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates [J] . C. H. Qiu, M. W. Leksono, J. I. Pankove, Applied Physics Letters . 1995,第5期

机译：蓝宝石衬底上co和氧共注入氮化镓薄膜的阴极发光研究
3. Epitaxial gallium nitride thin films grown on silicon substrates utilizing gallium nitride seed-layer formed by liquid source precursor [J] . Ky Nam Hoang, Hong Tak Kim, Woosuk Jun, The Korean journal of chemical engineering . 2012,第1期

机译：利用由液体源前驱物形成的氮化镓种子层在硅衬底上生长的外延氮化镓薄膜
4. Chemical vapor deposition of epitaxial zinc oxide thin films on gallium nitride/sapphire substrates [C] . Wen-Cheng Hou, Bor-Wen Lin, Li Chang, International Conference on II-VI Compounds . 2004

机译：氮化镓/蓝宝石基材上外延氧化锌薄膜的化学气相沉积
5. Thin film epitaxy, defects and interfaces in gallium nitride/sapphire and zinc oxide/sapphire heterostructures (polar and non-polar) for light emitting diodes . [D] . Pant, Punam. 2010

机译：发光二极管的氮化镓/蓝宝石和氧化锌/蓝宝石异质结构（极性和非极性）中的薄膜外延，缺陷和界面。
6. Bioelectronics Communication: Encoding Yeast Regulatory Responses Using Nanostructured Gallium Nitride Thin Films [O] . Patrick J. Snyder, Dennis R. LaJeunesse, Pramod Reddy, -1

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7. Gallium-nitride thin-film deposition on substrates structured by electron beam lithography [O] . Knotek Miroslav 2013

机译：通过电子束光刻在衬底上沉积氮化镓薄膜
8. Methods of Fabricating Gallium Nitride Semiconductor Layers on Substrates Including Non-Gallium Nitride Posts, and Gallium Nitride Semiconductor Structures Fabricated Thereby. [R] . Linthicum, K. J., Gehrke, T., Davis, R. F. 2005

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Simulation of a stress-strain state in thin structured gallium nitride films on sapphire substrates

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