Growth specifics of GaAs nanowires in mesa

Soshnikov I.P.; Petrov V.A.; Cirlin G.E.; Samsonenko Y.B.; Bouravlev A.D.; Zadiranov Y.M.; Ilinskaya N.D.; Troshkov S.I.

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Growth specifics of GaAs nanowires in mesa

机译：GaAs纳米线在台面中的生长特性

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The possibility of epitaxial growth of nanowire arrays on tilted faces of linear mesa has been demonstrated. The structural properties of GaAs nanowires grown on (331), (117), and (113) faces of samples with the (100) crystallographic orientation of the substrate have been studied. It has been found that there is a relation between the structural parameters of nanowires and the geometric orientation of the growth surface relative to the 〈111〉 directions and the surface of the substrate.

机译：已经证明了在线性台面的倾斜面上外延生长纳米线阵列的可能性。研究了在衬底的（100）晶体取向的样品的（331），（117）和（113）面上生长的GaAs纳米线的结构特性。已经发现，纳米线的结构参数与生长表面相对于＆ 111＆方向和衬底表面的几何取向之间存在关系。

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《Physics of the solid state》 |2013年第4期|共5页
作者
Soshnikov I.P.; Petrov V.A.; Cirlin G.E.; Samsonenko Y.B.; Bouravlev A.D.; Zadiranov Y.M.; Ilinskaya N.D.; Troshkov S.I.;
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正文语种 eng
中图分类 53.8;
关键词
Growth; specifics; GaAs;

机译：生长;特性;砷化镓;

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专利

1. Growth specifics of GaAs nanowires in mesa [J] . Soshnikov I.P., Petrov V.A., Cirlin G.E., Physics of the solid state . 2013,第4期

机译：GaAs纳米线在台面中的生长特性
2. Effects of growth interruption, As and Ga fluxes, and nitrogen plasma irradiation on the molecular beam epitaxial growth of GaAs/GaAsN core-shell nanowires on Si(111) [J] . Namsoo Ahn, Yoshiaki Araki, Masahiko Kondow, Japanese journal of applied physics . 2014,第6期

机译：生长中断，As和Ga通量以及氮等离子体辐照对Si（111）上GaAs / GaAsN核壳纳米线分子束外延生长的影响
3. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy [J] . Pavan Kumar Kasanaboina, Estiak Ahmad, Jia Li, Applied Physics Letters . 2015,第10期

机译：分子束外延自生生长稀氮化物GaAs / GaAsSbN / GaAs核壳纳米线
4. Growth, Structural and Optical Properties of GaAs, InGaAs and AlGaAs Nanowires and Nanowire Heterostructures [C] . Joyce, H.J., Qiang Gao, LEOS Annual Meeting Conference Proceedings, 2007 IEEE . 2007

机译：GaAs，InGaAs和AlGaAs纳米线和纳米线异质结构的生长，结构和光学性质
5. Modeling of the Growth Rate, Electrical and Optical Properties of GaAsSb Nanowires [D] . Karim, Md Rezaul. 2017

机译：GaAsSb纳米线的生长速率，电学和光学性质建模
6. Modeling of the growth of GaAs–AlGaAs core–shell nanowires [O] . Qian Zhang, Peter W Voorhees, Stephen H Davis 2017

机译：GaAs-AlGaAs核-壳纳米线的生长建模
7. Position-Controlled VLS Growth of Nanowires on Mask-Patterned GaAs Substrates for Axial GaAsSb/InAs Heterostructures (Phys. Status Solidi A 8∕2018) [O] . Kenichi Kawaguchi, Tsuyoshi Takahashi, Naoya Okamoto, 2018

机译：纳米线上的位置控制VLS在掩模图案化的GaAs基材上用于轴向盖或INAS异质结构（Physte Solidi A 8/2018）

Growth specifics of GaAs nanowires in mesa

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