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Persistent Photoconductivity in Semiconducting III-V Compounds

机译：半导体III-V化合物中的持久光电导性

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摘要

Evidence for persistent photoconductivity, i.e. electrical conductivity changes existing for a very long time after the excitation of nonmetallic solids by photons, was furnished back in the 19th century and put to practice even before modern solid-state physics had developed. At present, two complementary models are basically used to explain this phenomenon. One involves the trapping of nonequilibrium charge carriers by point centres of localization (traps) which slows down the recombination of electrons and holes generated by light or charged particles. In the other, electrons and holes are also separated spatially and prevented by potential barriers from recombination. Both types of relaxation process are discussed and experimental data, with special emphasis on the charge separation idea, presented.
机译：持久的光导性的证据，即光子激发非金属固体后很长一段时间内存在的电导率变化，早在19世纪就被提供，甚至在现代固态物理学发展之前就已付诸实践。目前，基本上使用两个互补模型来解释此现象。一种涉及通过定位的点中心（陷阱）捕获非平衡电荷载流子，这会减慢电子或由光或带电粒子产生的空穴的复合。另一方面，电子和空穴在空间上也是分开的，并被势垒阻碍了复合。讨论了两种弛豫过程，并给出了实验数据，其中特别强调了电荷分离的思想。

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