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Pyrromethene dye sensitized photopolymer - photochemical behavior in polymer matrix and application to photoresist for printed circuit board

机译:吡咯亚甲基染料敏化光敏聚合物-聚合物基体中的光化学行为及其在印刷电路板上的光致抗蚀剂中的应用

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摘要

The photochemical behavior of the visible light initiating system that consists of a sensitizing dye, 2,6-diethyl-8-phenyl-1,3,5,7-tetramethylpyrromethene BF{sub}2 complex (EPP), and a photoacid generator, N-trifluoromethylsulfonyloxy-1,8-naphthalimide (NIOTf), was studied mainly by means of absorption and fluorescence spectrometry not in solution but in a polymer matrix which is a closer medium to the one currently employed in the field of photoresists. Excited singlet electron transfer from EPP to NIOTf was considered as the main reaction pathway in this system. The EPP/NIOTf system was applied to a photoresist for printed circuit board with an appropriate binder polymer which contains an acetal protection group. A pattern profile of the photoresist was exceedingly affected by the amount of photogenerated acids, their diffusion, and amine in the atmosphere. Finally, by controlling exposure energy and the post-exposure bake (PEB) process, a photoresist with a high resolution (8μm line and space) was obtained under argon ion laser irradiation.
机译:由增感染料,2,6-二乙基-8-苯基-1,3,5,7-四甲基吡咯亚甲基BF {sub} 2配合物(EPP)和光致产酸剂组成的可见光引发系统的光化学行为, N-三氟甲基磺酰氧基-1,8-萘二甲酰亚胺(NIOTf)的研究主要是通过吸收和荧光光谱法,不是在溶液中,而是在聚合物基质中进行的,该基质是与光致抗蚀剂领域目前使用的介质更接近的介质。从EPP到NIOTf的激发单线电子转移被认为是该系统的主要反应途径。将EPP / NIOTf系统应用于带有合适的含缩醛保护基团的粘合剂聚合物的印刷电路板光致抗蚀剂。光致抗蚀剂的图案轮廓受大气中光生酸的量,其扩散和胺的影响极大。最后,通过控制曝光能量和曝光后烘烤(PEB)工艺,在氩离子激光辐照下获得了高分辨率(8μm的线条和间距)的光刻胶。

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