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首页> 外文期刊>Plasmonics >Coulomb Gap and Metal-Insulator-Semiconductor (MIS) Transition in ZnO-Ag/ZnO Film in the Plasmonic Domain
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Coulomb Gap and Metal-Insulator-Semiconductor (MIS) Transition in ZnO-Ag/ZnO Film in the Plasmonic Domain

机译：等离子域ZnO / n-Ag / ZnO薄膜中的库仑间隙和金属-绝缘体-半导体（MIS）跃迁

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摘要

Silver nanoparticles were incorporated in between zinc oxide layers to realize ZnO-Ag/ZnO sandwich structure. Particle size and volume fraction of nanocrystalline silver particles were optimized to obtain a layer exhibiting a strong plasmonic peak even when embedded in ZnO sandwich structure. Strong surface plasmon resonance peak in the optical absorbance spectra was observed at similar to 480 nm. Electrical conductivity in the temperature range of 10-200 K in the dark and when illuminated at 480 nm was studied to understand the transport processes associated with this material. The effect of surface plasmon resonance on the electron transport process was also specifically addressed in the metal-insulator-semiconductor (MIS) transition domain. The effect of additional density of states in the higher energy domain on the surface plasmon peak has been discussed and resulting broadening of the coulomb gap has been explained. Both the hopping energy (W (OPT)) and width of coulomb gap (Delta (ES)) increased in the plasmonic region.
机译：将银纳米颗粒掺入氧化锌层之间以实现ZnO / n-Ag / ZnO夹心结构。优化纳米晶银颗粒的粒径和体积分数，以获得即使在嵌入ZnO夹心结构时也显示出强等离子峰的层。在类似于480nm处观察到在光吸收光谱中的强表面等离子体共振峰。研究了在黑暗中以及在480 nm的光照下10-200 K的温度范围内的电导率，以了解与该材料相关的传输过程。在金属-绝缘体-半导体（MIS）过渡域中，也特别解决了表面等离子体激元共振对电子传输过程的影响。讨论了高能域中状态的附加密度对表面等离子体激元峰的影响，并解释了导致库仑间隙变宽的原因。在等离子体区中，跳跃能量（W（OPT））和库仑间隙宽度（Delta（ES））均增加。

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