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首页> 外文期刊>Progress in photovoltaics >Back-contacted back-junction re-type silicon solar cells featuring an insulating thin film for decoupling charge carrier collection and metallization geometry
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Back-contacted back-junction re-type silicon solar cells featuring an insulating thin film for decoupling charge carrier collection and metallization geometry

机译：背接触式背结重整型硅太阳能电池，具有绝缘薄膜，可将载流子收集和金属化几何结构分离

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摘要

In this study, back-contacted back-junction rc-type silicon solar cells featuring a large emitter coverage (point-like base contacts), a small emitter coverage (point-like base and emitter contacts), and interdigitated metal fingers have been fabricated and analyzed. For both solar cell designs, a significant reduction of electrical shading losses caused by an increased recombination in the non-collecting base area on the rear side was obtained. Because the solar cell designs are characterized by an overlap of the B-doped emitter and the P-doped base with metal fingers of the other polarity, insulating thin fihns with excellent electrical insulation properties are required to prevent shunting in these overlapping regions. Thus, with insulating thin films, the geometry of the minority charge carrier collecting emitter diffusion and the geometry of the interdigitated metal fingers can be decoupled. In this regard, plasma-enhanced chemical vapor deposited SiO_2 insulating thin fihns with various thicknesses and deposited at different temperatures have been investigated in more detail by metal-ihsulator-semiconductor structures. Furthermore, the influence of different metal layers on the insulation properties of the fihns has been analyzed. It has been found that by applying a SiO_2 insulating thin film with a thickness of more than 1000 run and deposited at 350 °C to solar cells fabricated on 1Ω cm and 10Ω, cm n-type float-zone grown silicon substrates, electrical shading losses could be reduced considerably, resulting in excellent short-circuit current densities of more than 41 mA/cm~2 and conversion efficiencies of up to 23.0%.
机译：在这项研究中，已经制造出具有大发射极覆盖范围（点状基极接触），小发射极覆盖范围（点状基极和发射极接触）以及指状金属指的背接触式背结rc型硅太阳能电池并进行分析。对于两种太阳能电池设计，由于在背面的非收集基部区域中增加的复合而导致的电遮蔽损失得到了显着的减少。因为太阳能电池设计的特征在于B掺杂的发射极和P掺杂的基极与另一极性的金属指重叠，所以需要具有极佳电绝缘性能的绝缘薄膜以防止在这些重叠区域中分流。因此，利用绝缘薄膜，少数电荷载流子收集发射极扩散的几何形状和叉指状金属指的几何形状可以解耦。在这方面，已经通过金属绝缘体-半导体结构更详细地研究了等离子体增强的化学气相沉积的具有各种厚度的SiO 2绝缘薄膜，并且在不同的温度下沉积。此外，分析了不同金属层对薄膜绝缘性能的影响。已经发现，通过将厚度大于1000nm的SiO_2绝缘薄膜施加到在1Ωcm和10Ω，cm n型浮区生长的硅衬底上制造的太阳能电池上，并在350°C下沉积，该SiO_2绝缘薄膜在350°C沉积，电遮蔽损耗可以大大降低电流密度，从而产生超过41 mA / cm〜2的出色的短路电流密度，转换效率高达23.0％。

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