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首页> 外文期刊>Chemistry: A European journal >Soluble InP and GaP Nanowires: Self-Seeded, Solution-Liquid-Solid Synthesis and Electrical Properties
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Soluble InP and GaP Nanowires: Self-Seeded, Solution-Liquid-Solid Synthesis and Electrical Properties

机译：可溶性InP和GaP纳米线：自种子，溶液-液固合成和电性能

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摘要

We demonstrate a facile method for self-seeded, solution-liquid-solid growth of soluble InP and GaP nanowires at it temperature of approximate to 300 degrees C. Both types of nanowires are single crystals with very small diameters. The synthesized InP nanowires are almost defect-free, whereas the GaP nanowires have some microtwins. The effect of reaction temperatures and input ligand/III/V (III and V indicate elements of Group 13 and 15 respectively) ratios oil wire formation is discussed, and two competitive chemical pathways involved in the nanowire formation are proposed. In addition, electrical properties of these III-V nanowires, generated from the solution-based approach, were investigated for the first time. The current-voltage (I-V) and room temperature resistance investigations indicate that both InP and GaP nanowires possess very low native point defects for carrier concentrations and they could be potentially promising building blocks in optoelectronic applications.
机译：我们展示了一种可溶的InP和GaP纳米线在大约300摄氏度的温度下自种子，溶液-液-固生长的简便方法。两种类型的纳米线都是直径很小的单晶。合成的InP纳米线几乎没有缺陷，而GaP纳米线具有一些微孪晶。讨论了反应温度和输入配体/ III / V（III和V分别表示第13和15组元素）的比率对油丝形成的影响，并提出了涉及纳米线形成的两种竞争性化学途径。此外，首次研究了基于溶液的方法产生的这些III-V纳米线的电性能。电流-电压（I-V）和室温电阻研究表明，InP和GaP纳米线均具有非常低的载流子浓度本征点缺陷，它们可能是光电应用中有希望的基础。

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