首页> 外文期刊>Chemistry: A European journal >Reducing GaH and GaC Bonds in Close Proximity to Oxidizing Peroxo Groups: Conflicting Properties in Single Molecules
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Reducing GaH and GaC Bonds in Close Proximity to Oxidizing Peroxo Groups: Conflicting Properties in Single Molecules

机译:减少接近氧化Peroxo基团的GaH和GaC键:单分子中的冲突性质。

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Treatment of [LiACHTUNGTRENUNG(H2Ga{CHACHTUNGTRENUNG( SiMe3)2}2)]·2OEt2 (1·2OEt2) with two equivalents of tert-butyl hydrogen peroxide, H-O-O-CMe3, afforded the organogallium peroxide [({(Me3Si)2HC}2- ACHTUNGTRENUNGGaACHTUNGTRENUNG(OH)ACHTUNGTRENUNG(OOCMe3)Li)2] (3), which possesses oxidizing peroxo groups in close proximity to reducing GaC bonds. The lithium atoms of the dimeric formula units are coordinated by both oxygen atoms of the peroxides and by two hydroxo groups. The cleavage of the GaC bond was not observed, even when an excess of H-OO- CMe3 was applied. Instead, the adduct [{(Me3Si)2HC}2Ga(OH)- ACHTUNGTRENUNG(OOCMe3)2Li2ACHTUNGTRENUNG(HOOCMe3)] (4) was isolated, which has an intact H-O-OCMe3 molecule terminally attached to lithium. A similar structural motif was found for the compound [(LiOOCMe3)2ACHTUNGTRENUNG(HOOCMe3)2] (5). The trihydrido gallanate [LiACHTUNGTRENUNG(H3Ga{CHACHTUNGTRENUNG( SiMe3)2})]·OEt2 (2) yielded the unique peroxide [({(Me3Si)2HC}Ga(H)- ACHTUNGTRENUNG(OOCMe3)2Li)2] (6) under similar conditions that possesses GaC and even more reactive GaH bonds beside peroxo groups. It decomposed at room temperature by the insertion of oxygen atoms into the GaH bonds and the formation of [({(Me3Si)2HC}Ga(OH)- ACHTUNGTRENUNG(OCMe3)ACHTUNGTRENUNG(OOCMe3)Li)2] (7), which was isolated in a low yield. Further decomposition gave the complete degradation of all peroxo groups with the formation of a relatively complicated Li4Ga4O8 cage (8).
机译:用两当量的叔丁基过氧化氢HOO-CMe3处理[LiACHTUNGTRENUNG(H2Ga {CHACHTUNGTRENUNG(SiMe3)2} 2)]·2OEt2(1·2OEt2),得到有机过氧化镓[({((Me3Si)2HC} 2 -ACHTUNGTRENUNGGaACHTUNGTRENUNG(OH)ACHTUNGTRENUNG(OOCMe3)Li)2](3),其具有氧化性的过氧基团,非常接近还原GaC键。二聚体式单元的锂原子由过氧化物的两个氧原子和两个羟基基团配位。即使施加过量的H-OO-CMe 3,也未观察到GaC键的断裂。取而代之的是分离了加合物[{((Me3Si)2HC} 2Ga(OH)-ACTHUNGTRENUNG(OOCMe3)2Li2ACHTUNGTRENUNG(HOOCMe3)]](4),该加合物具有完整的H-O-OCMe3分子,该分子末端连接至锂。对于化合物[(LiOOCMe3)2ACHTUNGTRENUNG(HOOCMe3)2](5),发现了相似的结构基序。三氢没食子酸酯[LiACHTUNGTRENUNG(H3Ga {CHACHTUNGTRENUNG(SiMe3)2})·OEt2(2)在以下条件下产生独特的过氧化物[({(Me3Si)2HC} Ga(H)-ACHTUNGTRENUNG(OOCMe3)2Li)2](6)具有类似过氧化物基团的GaC甚至具有更多反应性GaH键的类似条件。它在室温下通过向GaH键中插入氧原子和[[{{(Me3Si)2HC} Ga(OH)-ACTHUNGTRENUNG(OCMe3)ACHTUNGTRENUNG(OOCMe3)Li)2]的分解而分解,这是(7)产量低。进一步分解使所有过氧基团完全降解,形成了一个相对复杂的Li4Ga4O8笼(8)。

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