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首页> 外文期刊>Chemistry: A European journal >Aqueous-Solution Growth of GaP and InP Nanowires:A General Route to Phosphide,Oxide,Sulfide,and Tungstate Nanowires
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Aqueous-Solution Growth of GaP and InP Nanowires:A General Route to Phosphide,Oxide,Sulfide,and Tungstate Nanowires

机译：GaP和InP纳米线的水溶液生长：制备磷化物，氧化物，硫化物和钨酸盐纳米线的一般方法

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摘要

A general synthetic route has been developed for the growth of metal phosphide,oxide,sulfide,and tungstate nanowires in aqueous solution.In detail,cetyltrimethylammoni-um cations(CTA~+)can be combined with anionic inorganic species along a co-condensation mechanism to form lamellar inorganic-surfactant intercalated mesostructures,which serve as both microreactors and reactants for the growth of nanowires.For example,GaP,InP,y-MnO_2,ZnO,SnS_2,ZnS,CdWO_4,and ZnWO_4 nanowires have been grown by this route.To the best of our knowledge,this is the first time that the synthesis of GaP and InP nanowires in aqueous solution has been achieved.This strategy is expected to extend to grow nanowires of other materials in solution or by vapor transport routes,since the nanowire growth of any inorganic materials can be realized by seleting an appropriate reaction and its corresponding lamellar inorganic-surfactant precursors.
机译：已开发出一条通用的合成路线，用于在水溶液中生长金属磷化物，氧化物，硫化物和钨酸盐纳米线。详细地讲，鲸蜡基三甲基铵阳离子（CTA〜+）可以通过共缩合机理与阴离子无机物结合形成层状无机表面活性剂插层介孔结构，既可作为微反应器又可作为纳米线生长的反应物。据我们所知，这是首次在水溶液中合成GaP和InP纳米线。由于这种方法有望扩展到在溶液中或通过蒸汽传输途径生长其他材料的纳米线。可以通过选择适当的反应及其相应的层状无机表面活性剂前体来实现任何无机材料的纳米线生长。

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