Numerous applications are appearing for wide bandgap semiconductors, including blue/UV light emitters, high temperature/high power electronics, passivation layers for other semiconductors, and various types of sensors. The purpose of this symposium is to bring together the crystal growth, device processing, circuit design and applications communities to discuss basic science and technology issues related to utilization of III-nitride based semiconductors. Papers are solicited in the following areas: 1. Substrates and bulk growth; 2. Epitaxial growth, especially for highly-doped layers; 3. High growth-rate methods; 4. Wet and dry etching techniques; 5. Ion implantation and diffusion; 6. Contact technology; 7. Fundamental optical, physical, and electrical properties; 8. Materials and device characterization; 9. Harsh environment sensors, chemical and gas sensors, and other novel applications for wide gap materials; and 10. Reliability issues. The program will consist of both invited and contributed papers.Publication of a joint Proceedings Volume with the symposium on State-of-the-Art Program on Compound Semiconductors XXXVI is planned to be available at the Meeting. A typed camera ready copy of the full proceedings volume manuscript and a list of key words is required by January 1,2002. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after acceptance of abstracts.
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