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首页> 外文期刊>The European physical journal. Applied physics >Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods
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Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods

机译：宽带隙半导体中的缺陷：通过互补方法进行选择性蚀刻和校准

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摘要

Two approaches to defect-selective etching used for revealing and analysis of defects in GaN and SiC are described and critically evaluated. These are: (i) orthodox etching which results in formation of pits on the defect sites and (ii) electroless etching, which yields protruding etch features. The mechanisms of surface reactions that are responsible for the distinct differences in the morphology of defect-related etch features are discussed. The most frequently used etching systems for GaN and SiC and the methods of verification of their reliability in revealing different types of defects are described.
机译：描述并严格评估了用于揭示和分析GaN和SiC中的缺陷的两种缺陷选择蚀刻方法。它们是：（i）正统蚀刻，其导致在缺陷部位上形成凹坑;（ii）化学蚀刻，其产生突出的蚀刻特征。讨论了与缺陷相关的蚀刻特征的形态有明显差异的表面反应机理。描述了最常用的GaN和SiC蚀刻系统以及验证其在揭示不同类型缺陷中的可靠性的方法。

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