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首页> 外文期刊>The European physical journal. Applied physics >Incomplete oxidation in back channel of GaInZnO thin-film transistor grown by rf sputtering
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Incomplete oxidation in back channel of GaInZnO thin-film transistor grown by rf sputtering

机译：射频溅射生长GaInZnO薄膜晶体管的反向沟道中的不完全氧化

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摘要

Thin-film transistors (TFT's) may have a low-quality back channel in addition to the high-quality main channel. The presence of the back channel can deteriorate TFT turn-off characteristics. We studied properties of the back channel in bottom-gate GaInZnO TFT's grown by rf sputtering. X-ray photoelectron spectroscopy (XPS) results confirmed existence of low-quality oxide in the back channel. We observed that 200°C annealing increased binding energies of metals and oxygen on the surface. This energy increase can be explained as a result of tighter bonding between metals and oxygen. When the top surface of GaInZnO was removed by Ar etching, XPS did not show such energy increase after the annealing. XPS also showed that the top surface has significantly higher In concentration compared to the bulk.
机译：薄膜晶体管（TFT）除具有高质量的主通道外，还可能具有劣质的反向通道。反向通道的存在会降低TFT的截止特性。我们研究了通过射频溅射生长的底栅GaInZnO TFT中反向沟道的特性。 X射线光电子能谱（XPS）结果证实了反向通道中存在低质量氧化物。我们观察到200°C退火会增加表面上金属和氧的结合能。这种能量增加可以解释为金属和氧气之间更紧密的结合的结果。当通过Ar蚀刻去除GaInZnO的顶表面时，XPS在退火后没有显示出这种能量增加。 XPS还显示，与本体相比，顶面的In浓度明显更高。

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