首页> 外文期刊>The European physical journal. Applied physics >Numerical modeling of the effect of optical pulse position on the impulse response of a Metal-Semiconductor-Metal (MSM) photodetector (low field condition)
【24h】

Numerical modeling of the effect of optical pulse position on the impulse response of a Metal-Semiconductor-Metal (MSM) photodetector (low field condition)

机译:光脉冲位置对金属-半导体-金属(MSM)光电探测器(低场条件)的脉冲响应影响的数值模型

获取原文
获取原文并翻译 | 示例
           

摘要

We present a numerical modeling of the effect of optical pulse position on the impulse response of a GaAs back-gated Metal-Semiconductor-Metal (MSM) photodetector at low bias voltages. The backside contact of the photodetector is set to the floating condition (disconnected from the external circuit). Experimentally the device response to the optical pulse is strong only when the position of the optical pulse is around the anode contact. We have used a one-dimensional time-dependent nonlinear ambipolar transport equation to model this behavior. Our numerical modeling results agree well with the reported experimental findings.
机译:我们提出了在低偏置电压下光脉冲位置对GaAs背栅金属半导体金属(MSM)光电探测器的脉冲响应影响的数值模型。光电探测器的背面触点设置为浮动状态(与外部电路断开连接)。实验上,仅当光脉冲的位置在阳极触点周围时,设备对光脉冲的响应才强。我们已经使用一维时间相关的非线性双极性输运方程来对此行为进行建模。我们的数值模拟结果与报道的实验结果非常吻合。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号