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首页> 外文期刊>The European physical journal. Applied physics >Electrical and optical properties of annealed plasma-modified porous silicon
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Electrical and optical properties of annealed plasma-modified porous silicon

机译：退火等离子体改性多孔硅的电学和光学性质

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摘要

A very large surface to volume ratio of nanoporous silicon (PS) produces a high density of surface states, which are responsible for uncontrolled oxidation of the PS surface. Hence it disturbs the stability of the material and also creates difficulties in the formation of a reliable electrical contact. To passivate the surface states of the nanoporous silicon, hydrocarbon films prepared by plasma enhanced chemical vapor deposition of methane (PECVD) have been deposited on porous silicon (PS). Conduction properties as well as optical characteristics of the as-deposited samples and annealed ones have been studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements, spectral response, ellipsometry and Fourier transform infrared spectroscopy (FTIR) as a function of the annealing temperature, ranging from 200 to 750 °C. By high-temperature treatment, the low rectifying I-V curves become strong rectifying and C-V curves are similar to those of metal-insulator-semiconductor structures. These characteristics were explored and can be appropriately used in the fabrication of optoelectronics and sensor devices based on PS.
机译：纳米多孔硅（PS）的非常大的表面体积比会产生高密度的表面态，这导致PS表面的不受控制的氧化。因此，它破坏了材料的稳定性，并且在形成可靠的电接触中也造成了困难。为了钝化纳米多孔硅的表面状态，通过等离子体的甲烷的化学增强化学气相沉积（PECVD）制备的烃膜已经沉积在多孔硅（PS）上。通过电流-电压（IV）和电容-电压（CV）测量，光谱响应，椭圆​​光度法和傅立叶变换红外光谱（FTIR）函数研究了沉积样品和退火样品的导电特性以及光学特性退火温度的范围为200至750°C。通过高温处理，低整流的I-V曲线变为强整流，并且C-V曲线类似于金属-绝缘体-半导体结构。对这些特性进行了探索，可以适当地用于制造基于PS的光电和传感器设备。

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