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首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Enhancement of Initial Growth of ZnO Films on Layer-Structured Bi2Te3 by Atomic Layer Deposition
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Enhancement of Initial Growth of ZnO Films on Layer-Structured Bi2Te3 by Atomic Layer Deposition

机译：原子层沉积增强层结构化Bi2Te3上ZnO薄膜的初始生长

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摘要

The initial growth behavior of ZnO films by atomic layer deposition (ALD) on layer-structured Bi2Te3 was investigated. Despite the lack of adsorption sites on the basal plane of Bi2Te3, negligible incubation in the ALD of ZnO on Bi2Te3 was found in the temperature range from 100 to 160 degrees C, and even the enhancement of the initial growth was observed at 200 degrees C. We demonstrate that a ZnTe interfacial layer was formed in the early growth stage by the interaction between diethylzinc and Bi2Te3, which improved the nucleation of ZnO on the basal plane of Bi2Te3. These results indicate that surface modification via the interaction between a precursor and layer-structured materials is an efficient way to achieve fluent and uniform nucleation on layer-structured materials such as Bi2Te3.
机译：研究了原子层沉积（ALD）在层状Bi2Te3上的ZnO薄膜的初始生长行为。尽管Bi2Te3的基面上没有吸附位点，但在100至160摄氏度的温度范围内，发现ZnO在ALD上的ZnO ALD中的孵育作用微不足道，甚至在200摄氏度时也观察到初始生长的增强。我们证明了ZnTe界面层是在二乙基锌和Bi2Te3之间的相互作用的早期生长阶段形成的，这改善了Bi2Te3基面上ZnO的成核作用。这些结果表明，通过前体与层结构材料之间的相互作用进行表面改性是在层结构材料（例如Bi2Te3）上实现流利且均匀成核的有效方法。

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