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MULTIREFERENCE CONFIGURATION INTERACTION STUDIES ON METASTABLE STATES OF THE DICATION BN2+

机译:BN2 +介导亚稳态的多参考构象相互作用研究

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Multireference CI calculations predict fourteen states of BN2+ to be quasibound, an uncommonly large number for a first-row diatomic, confirming the important role played by the electropositive B atom in stabilizing molecular dications. About two-thirds of the metastable potentials have dissociation barriers (D-eff) between 0.59 and 2.25 eV, accommodating several vibrational levels and therefore being kinetically stable. The ground state X (3) Sigma(-), however, might be difficult to study experimentally because it is only weakly bound (D-eff=0.23 eV), and its formation via ionization of BN or BN+ has unfavorable Franck-Condon factors (FCF). The 1 (5) Sigma(-) state is the best candidate for detecting BN2+: Its barrier is the highest (D-eff-2.25 eV), sustaining about 30 vibrational levels (with tunneling lifetimes tau(upsilon)(T) approximate to infinity for upsilon < 20), and the ionization FCFs are favorable. The 1 (1) Delta state might also be detectable since its properties are similar to those of 1 (5) Sigma(-). Near equilibrium, most metastable states are described by the configurations 3 sigma(2)4 sigma 5 sigma 1 pi(2) and 3 sigma(2)4 sigma 1 pi(3), both having charge distributions B2+N. The adiabatic ionization potential into BN2+ (X (3) Sigma(-)) is 21.4 eV for ionization from BN+ (X (4) Sigma(-)) and 32.9 eV from BN(X (3) Pi). The corresponding IPs into 1 (5) Sigma(-) lie 1.12 eV higher. (C) 1995 American Institute of Physics. [References: 63]
机译:多参考CI计算预测BN2 +的十四种状态是准结合的,对于第一行双原子来说这是一个不常见的数目,证实了正电B原子在稳定分子指示中起着重要作用。大约三分之二的亚稳电位具有在0.59和2.25 eV之间的解离势垒(D-eff),可容纳多个振动水平,因此在动力学上是稳定的。但是,基态X(3)Sigma(-)可能很难进行实验研究,因为它仅是弱结合的(D-eff = 0.23 eV),并且通过BN或BN +的电离形成具有不利的Franck-Condon因子(FCF)。 1(5)Sigma(-)状态是检测BN2 +的最佳候选者:其势垒最高(D-eff-2.25 eV),可承受约30个振动水平(隧穿寿命tau(upsilon)(T)约等于upsilon <20时的无穷大,电离FCF是有利的。 1(1)Delta状态也可能是可检测到的,因为其性质类似于1(5)Sigma(-)的性质。接近平衡时,大多数亚稳态由结构3 sigma(2)4 sigma 5 sigma 1 pi(2)和3 sigma(2)4 sigma 1 pi(3)描述,它们都具有电荷分布B2 + N。从BN +(X(4)Sigma(-))电离到BN2 +(X(3)Sigma(-))的绝热电离势是21.4 eV,从BN(X(3)Pi)产生32.9 eV。进入1(5)Sigma(-)的对应IP高1.12 eV。 (C)1995年美国物理研究所。 [参考:63]

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