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首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >Formation of Single-Walled Carbon Nanotubes via Reduced-Pressure Thermal Chemical Vapor Deposition
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Formation of Single-Walled Carbon Nanotubes via Reduced-Pressure Thermal Chemical Vapor Deposition

机译：通过减压热化学气相沉积法形成单壁碳纳米管

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摘要

We report the growth of carbon nanotubes (CNTs) via reduced-pressure chemical vapor deposition (CVD), using a gas mixture of methane/hydrogen and iron/molybdenum catalyst supported by alumina nanoparticles. The CNTs are either single-walled or double-walled as characterized by transmission electron microscopy. Investigation of various growth parameters indicate that CNT growth is limited by the gas supply when CVD is performed in the temperature range of 750-900 ℃, whereas the limiting factor for growth at 700 ℃ is the rate of carbon diffusion through the catalyst particles. The density of CNTs changes with CVD pressure as well as gas flow rates when growth is limited by gas supply. We also use a single-step lithographic approach to form catalyst islands on top of patterned electrodes and to selectively grow CNTs bridging neighboring electrodes. The process yields both semiconducting and metallic CNTs as characterized by current-voltage measurements.
机译：我们报告了通过使用纳米碳纳米管负载的甲烷/氢气和铁/钼催化剂的气体混合物，通过减压化学气相沉积（CVD）来生长碳纳米管（CNT）。如通过透射电子显微镜表征的，CNT是单壁的或双壁的。对各种生长参数的研究表明，当在750-900℃的温度范围内进行CVD时，CNT的生长受到气体供应的限制，而在700℃下生长的限制因素是碳扩散通过催化剂颗粒的速率。当生长受到气体供应的限制时，CNT的密度随CVD压力以及气体流速而变化。我们还使用单步光刻方法在图案化电极的顶部形成催化剂岛，并有选择地生长桥接相邻电极的CNT。如电流-电压测量所表征，该过程同时产生半导体和金属CNT。

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