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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Large-Scale Synthesis of Wide Band Gap Semiconductor Nanostructures by Microwave Method
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Large-Scale Synthesis of Wide Band Gap Semiconductor Nanostructures by Microwave Method

机译:微波法大规模合成宽带隙半导体纳米结构

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摘要

Low-dimension semiconductor nanostructures were successfully synthesized by a fast, simple, and low-cost microwave method. By heating raw materials under microwave irradiation and controlled conditions, diverse nanostructures for semiconducting oxides and carbides were synthesized without extra metal catalysts. In this paper, flower-like and net structural oxide and carbide semiconductors in nanoscale have been studied in detail. Structural, morphological, and elemental analysis revealed that the as-synthesized nanostructures were highly pure and structurally uniform. The possible growth mechanisms of these nanostructures were preliminarily discussed. The temperature and the gas-phase supersaturation in their growing processes have important effects on their morphologies. The unique synthesis method may open a new way for the fabrication of self-assembled multidimensional structures, which are expected to find a wide range of important applications in nanodevices and nanocomposites.
机译:通过快速,简单,低成本的微波方法成功合成了低维半导体纳米结构。通过在微波辐射和受控条件下加热原料,无需额外的金属催化剂即可合成用于半导体氧化物和碳化物的多种纳米结构。在本文中,已经详细研究了纳米级的花状和净结构的氧化物和碳化物半导体。结构,形态和元素分析表明,合成后的纳米结构是高度纯净的,并且结构均匀。初步讨论了这些纳米结构的可能的生长机理。生长过程中的温度和气相过饱和度对其形态具有重要影响。独特的合成方法可能为自组装多维结构的制造开辟新途径,有望在纳米器件和纳米复合材料中找到广泛的重要应用。

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