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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Enhancement of field-effect mobility and stability of poly(3-hexylthiophene) field-effect transistors by conformational change
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Enhancement of field-effect mobility and stability of poly(3-hexylthiophene) field-effect transistors by conformational change

机译：通过构象变化增强聚（3-己基噻吩）场效应晶体管的场效应迁移率和稳定性

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摘要

With the aim of enhancing the field-effect mobility and air stability of self-aligned regioregular poly(3-hexylthiophene), P3HT, by promoting two-dimensional molecular ordering, we transformed the chemical structure of the P3HT chain from a benzoid to a quinoid structure by doping the P3HT solution with HAuCl4 prior to film formation. We found that, for the appropriate HAuCl4 concentration, the P3HT nanocrystals adopt a highly ordered molecular structure with a field-effect mobility of 0.03 cm(2) V-1 s(-1), which is an improvement by a factor of more than 100. This increase in field-effect mobility is due to a significant enhancement of molecular ordering and the perpendicular orientation of the nanocrystals with respect to the insulator substrate. This resulted from the change in the P3HT chain conformation from a benzoid to a quinoid structure due to oxidation by HAuCl4. The quinoid structure favors a linear or expanded-coil conformation, so the thiophene inter-ring bonds have increased double-bond character, which improves the molecular ordering. Furthermore, the electrical properties of a doped P3HT device had highly improved stability to air without encapsulation. These results suggest that the effect of unintentional doping by oxygen on HALICl(4)-doped P3HT film is insignificant because the p-type doping effect of HAuCl4 is the major contributor.
机译：为了增强自对准区域规则的聚（3-己基噻吩）P3HT的场效应迁移率和空气稳定性，通过促进二维分子有序化，我们将P3HT链的化学结构从苯甲酸酯化为喹啉通过在成膜之前用HAuCl4掺杂P3HT溶液来形成结构。我们发现，对于适当的HAuCl4浓度，P3HT纳米晶体采用高度有序的分子结构，其场效应迁移率为0.03 cm（2）V-1 s（-1），与以前相比提高了两倍以上。 100.场效应迁移率的提高是由于分子有序性和纳米晶体相对于绝缘体基板的垂直取向显着增强。这是由于HAuCl4氧化导致P3HT链构象从苯甲结构变为醌型结构的结果。醌型结构有利于线性或膨胀螺旋构象，因此噻吩环间键具有增强的双键特性，从而改善了分子有序性。此外，掺杂的P3HT器件的电学性质在不封装的情况下具有对空气的高度稳定性。这些结果表明，氧气无意掺杂对HALICl（4）掺杂的P3HT薄膜的影响微不足道，因为HAuCl4的p型掺杂效应是主要的贡献者。

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