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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Nanocomposite Thin Film Based on Ytterbium Fluoride and N,N'-Bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4,-diamine and Its Application in Organic Light Emitting Diodes as Hole Transport Layer
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Nanocomposite Thin Film Based on Ytterbium Fluoride and N,N'-Bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4,-diamine and Its Application in Organic Light Emitting Diodes as Hole Transport Layer

机译：基于氟化Y和N，N'-双（1-萘基）-N，N'-二苯基-1,1'-联苯-4,4，-二胺的纳米复合薄膜及其在有机发光二极管中的应用传输层

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摘要

We present a nanocomposite thin film based on ytterbium fluoride (YbF3) and N,N'-bis(l-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB). The transmission electron microscopy study testified the presence of YbF3 nanoparticles with a size of 3—5nm, and these nanoparticles were observed to be uniformly dispersed in NPB. The conductance of YbF3 (50%)-doped NPB was measured to be 1.76 x 10~(-5) S, much higher than the value of 5.81 x 10~(-8) S for pure NPB film. However, unlike other p-doped systems, the absorption spectrum study shows that there is no obvious interaction between the host (NPB) and the dopant (YbF3). The hole mobility of YbF3 (50%)-doped NPB decreases to 7.31 x 10~(-5) cm~2/(V s) at an electric field of 4 x 10~5 V/cm, while that of pure NPB film is 5.87 x 10~(-4) cm~2/(V s). We believe that the improved film conductivity and decreased hole mobility can enhance the built-in field and thus favor the electron injection. Due to the improved balance of holes and electrons, a double-layer device with YbF3-doped NPB as the HTL and tris(8-hydroxyquinolinolato)aluminum (Alq3) as the electron transport and light-emitting layer shows a luminous efficiency of 4.50 cd/A at 300 mA/cm~2, 20% higher than that of control device with pure NPB as the HTL.
机译：我们提出了一种基于氟化（YbF3）和N，N'-双（1-萘基）-N，N'-联苯-1,1'-联苯-4,4'-二胺（NPB）的纳米复合薄膜。透射电子显微镜研究证实了存在YbF3纳米粒子的大小为3-5 nm，并且观察到这些纳米粒子均匀地分散在NPB中。测得掺YbF3（50％）的NPB的电导为1.76 x 10〜（-5）S，远高于纯NPB薄膜的5.81 x 10〜（-8）S的值。但是，与其他p掺杂系统不同，吸收光谱研究表明，主体（NPB）和掺杂物（YbF3）之间没有明显的相互作用。掺YbF3（50％）的NPB的空穴迁移率在4 x 10〜5 V / cm的电场下降低到7.31 x 10〜（-5）cm〜2 /（V s），而纯NPB膜的空穴迁移率降低为5.87 x 10〜（-4）cm〜2 /（V s）。我们认为，改善的薄膜电导率和降低的空穴迁移率可以增强内建电场，因此有利于电子注入。由于改善了空穴和电子的平衡，使用掺YbF3的NPB作为HTL和使用三（8-羟基喹啉基）铝（Alq3）作为电子传输和发光层的双层器件的发光效率为4.50 cd / A在300 mA / cm〜2时，比纯NPB作为HTL的控制设备高20％。

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