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首页> 外文期刊>The journal of physics and chemistry of solids >Structure and electrical property of gallium nitride nanowires synthesized in plasma-enhanced hot filament chemical vapor deposition system
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Structure and electrical property of gallium nitride nanowires synthesized in plasma-enhanced hot filament chemical vapor deposition system

机译：等离子体增强热丝化学气相沉积系统合成的氮化镓纳米线的结构和电性能

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摘要

Aligned gallium nitride (GaN) nanowires were catalytically synthesized in a plasma-enhanced hot filament chemical vapor deposition system, in which GaN powder and nitrogen were used for the gallium and nitrogen sources, respectively. The results of scanning electron microscope, X-ray diffractometer, micro-Raman spectroscopy and transmission electron microscope indicate that the n-type GaN nanowires with different diameters are formed in wurtzite crystal structure. Combined the vapor-liquid-solid growth mechanism with the plasma-related effects, the formation of n-type GaN nanowires with different diameters was analyzed. The electrical property of a single GaN nanowire was measured in transmission electron microscope at room temperature and the result indicates that the current-voltage curve exhibits a nonlinear behavior and a double diode-like characteristic. In particular, the double diode-like characteristic is highly related to the application of GaN nanowires in the area of nano-diode devices such as alternating current limiter.
机译：在等离子体增强的热丝化学气相沉积系统中催化合成了取向氮化镓（GaN）纳米线，其中GaN粉和氮分别用作镓和氮源。扫描电子显微镜，X射线衍射仪，显微拉曼光谱和透射电子显微镜的结果表明，在纤锌矿晶体结构中形成了不同直径的n型GaN纳米线。结合气液固生长机理与等离子体相关效应，分析了不同直径n型GaN纳米线的形成。在室温下用透射电子显微镜测量了单个GaN纳米线的电性能，结果表明电流-电压曲线表现出非线性行为和类似双二极管的特性。特别地，类双二极管的特性与GaN纳米线在纳米二极管器件（例如交流限流器）领域的应用高度相关。

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