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Hydrogen plasma surface activation of silicon for biomedical applications.

机译:用于生物医学的硅的氢等离子体表面活化。

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Silicon has gradually been recognized to be an essential trace element in the normal metabolism of higher animals, and the role of silicon in the human body has aroused interests in the biomedical community. In fact, the interactions between silicon-based devices and the human body such as biosensors and microelectromechanical systems (MEMS) often suffer from poor biocompatibility. In this work, hydrogen plasma immersion ion implantation (H-PIII) is conducted to improve the bioactivity or bone conductivity of silicon. In order to investigate the formation mechanism of bone-like apatite on the surface of the hydrogen implanted silicon wafer, two comparative experiments, hydrogenation and argon bombardment, are performed. The H-PIII sample exhibits an amorphous surface consisting of Si-H bonds. After immersion in simulated body fluids, a negatively charged surface containing the functional group ([triple bond]Si-O-) is produced and bone-like apatite is observed to nucleate and grow on the surface. The surface of the H-PIII silicon wafer favors the adhesion and growth of osteoblast cells and good cytocompatibility may be inferred.
机译:硅已逐渐被认为是高等动物正常代谢中必不可少的微量元素,硅在人体中的作用引起了生物医学界的关注。实际上,诸如生物传感器和微机电系统(MEMS)之类的硅基设备与人体之间的相互作用通常会遭受较差的生物相容性。在这项工作中,进行氢等离子体浸没离子注入(H-PIII)以提高硅的生物活性或骨电导率。为了研究在氢注入硅片表面上形成骨状磷灰石的机理,进行了两个对比实验,氢化和氩轰击。 H-PIII样品显示出由Si-H键组成的非晶表面。浸入模拟体液后,会产生一个带负电荷的含有官能团([三键] Si-O-)的表面,并观察到骨状磷灰石成核并在该表面上生长。 H-PIII硅片的表面有利于成骨细胞的粘附和生长,并且可以推断出良好的细胞相容性。

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