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首页> 外文期刊>Surface & Coatings Technology >Enhanced hardness in two-layer a-BONc-SiC coating prepared by plasma-assisted MOCVD and thermal MOCVD
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Enhanced hardness in two-layer a-BONc-SiC coating prepared by plasma-assisted MOCVD and thermal MOCVD

机译：通过等离子体辅助MOCVD和热MOCVD制备的两层a-BON / nc-SiC涂层的硬度提高

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摘要

We have synthesized the simple a-BON and nc-SiC thin films as well as multilayered a-BONc-SiC thin film on Si(001) substrates by combining low-frequency RF-derived plasma-assisted MOCVD and thermal MOCVD in the deposition temperature range of 300-900 degrees C trimethylborate (TMB), and diethylmethylsilane (DEMS) precursors were used to grow a-BON and nc-SiC thin films, respectively. Ar gas was applied as a plasma source and N-2 gas was used as a reactive gas as well as additional nitrogen source. To analyze the mechanism of obtaining new materials with high hardness by combining soft amorphous material with hard crystalline material, in this study, we have mainly investigated the relationship between structure and hardness enhancement of the coating layers on the effects of different kind of layer and the crystallization of layers. The results show that microstructure of each layer and a new nanocrystalline material that deposited between a-BON thin film and nc-SiC thin film affect the hardness enhancement in multilayered a-BONc-SiC thin films. Hardness obtained from a-BON was about 10 GPa. However, we could obtain strong hardness enhancement in a multilayered a-BONc-SiC thin film up to 36 GPa. (c) 2004 Elsevier B.V. All rights reserved.
机译：我们通过将低频射频衍生的等离子体辅助MOCVD和热MOCVD结合在Si（001）衬底上，在Si（001）衬底上合成了简单的a-BON和nc-SiC薄膜以及多层a-BON / nc-SiC薄膜。沉积温度范围为300-900℃的硼酸三甲酯（TMB）和二乙基甲基硅烷（DEMS）前驱体分别用于生长a-BON和nc-SiC薄膜。氩气用作等离子体源，N-2气用作反应性气体以及其他氮气源。为了分析通过将软质无定形材料与硬质结晶性材料结合而获得高硬度新材料的机理，在本研究中，我们主要研究了涂层的结构与硬度增强之间的关系，该关系是由于不同种类的涂层和层的结晶。结果表明，每一层的微观结构和沉积在a-BON薄膜与nc-SiC薄膜之间的新型纳米晶体材料都会影响多层a-BON / nc-SiC薄膜的硬度提高。由a-BON获得的硬度为约10GPa。但是，我们可以在高达36 GPa的多层a-BON / nc-SiC薄膜中获得强大的硬度增强。 （c）2004 Elsevier B.V.保留所有权利。

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