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首页> 外文期刊>Surface & Coatings Technology >Influence of the plasma current to Ti-melt on the plasma parameters and microstructure of TiN coatings in the triode ion plating system
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Influence of the plasma current to Ti-melt on the plasma parameters and microstructure of TiN coatings in the triode ion plating system

机译：等离子体电流对Ti熔体的影响对三极离子镀系统中TiN涂层的等离子体参数和微观结构的影响

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TiN coatings have been deposited by triode ion plating in a mixture of Ar and N-2 with a varying total current through the melt. The observed energy spectra of ions and neutrals are discussed with respect to the plasma parameters measured with Langmuir probes. The current I-pm from the plasma to the Ti-melt in the crucible was modified from 0 A up to 100 A. As I-pm is increased, major effects on the plasma and on the film microstructure (preferred orientation, stress-free lattice parameter, residual stress, thickness and microhardness) were observed. The positive voltage of the melt U-R with respect to the ground increased from 0.1 to 29 V. The plasma potential (positive voltage with respect to ground) of the main plasma body increased from 4 to 16 V, while the electron temperature ranged from 2.5 to 4 eV. Plasma density and floating potential is also discussed. A high energy tail appeared in the energy distribution function of some neutral and ionic species, especially for neutral and ionized evaporated Ti. At high values of I-pm the energy distribution of both highly energetic Ti+ and neutral Ti goes up to 25 eV and 30 eV. At low values of I-pm the majority of the Ti+ ions are thermalized. The microstructure of the deposited TiN films develops from porous structures, with low compressive or even tensile stresses at I-pm=0 A, up to dense structures, with high compressive stresses of more than 15 GPa at the highest value of I-pm. Possible explanations of the observed effects are discussed, based on plasma ionization processes close to the melt and in the plasma body. (C) 1997 Elsevier Science S.A.
机译：TiN涂层已通过三极离子镀在Ar和N-2的混合物中以变化的总电流通过熔体的方式沉积。关于使用Langmuir探针测量的等离子体参数，讨论了观察到的离子和中性能谱。从等离子体到坩埚中Ti熔体的电流I-pm从0 A更改为100A。随着I-pm的增加，对等离子体和膜微结构的主要影响（首选取向，无应力）观察到晶格参数，残余应力，厚度和显微硬度。熔体UR相对于地面的正电压从0.1 V增加到29V。主等离子体体的等离子体电势（相对于地面的正电压）从4 V增加到16 V，而电子温度范围从2.5 V升高到16V。 4 eV。还讨论了等离子体密度和浮动电位。在某些中性和离子物种的能量分布函数中出现了一个高能尾，特别是对于中性和离子化的蒸发Ti。在高I-pm值下，高能Ti +和中性Ti的能量分布分别高达25 eV和30 eV。在较低的I-pm值下，大多数Ti +离子会被热化。沉积的TiN薄膜的微观结构是从多孔结构发展而来的，在I-pm = 0 A时具有低的压缩应力或什至是拉伸应力，直到致密的结构，在I-pm的最大值时具有超过15 GPa的高压缩应力。基于接近熔体并在等离子体体内的等离子体电离过程，讨论了观察到的效应的可能解释。 （C）1997年Elsevier Science S.A.

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