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首页> 外文期刊>Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films >Toward accurate characterization of nitrogen depth profiles in ultrathin oxynitride films
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Toward accurate characterization of nitrogen depth profiles in ultrathin oxynitride films

机译：为了准确表征超薄氮氧化物薄膜中的氮深度分布

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Good accuracy in depth profile analyses of nitrogen in ultrathin oxynitride films is desirable for process development and routine process monitoring. Low energy SIMS is one of the techniques that has found success in the accurate characterization of thin oxynitride films. This work investigated the artifacts in a typical depth profile analysis of nitrogen with the current SIMS technique and the ways to improve the accuracy by selecting optimal analytical conditions. It was demonstrated that surface roughness developed rapidly in a SiO2/Si stack when it was bombarded with an O-2(+) beam at 250 eV and angle of incidence from 70 to 79 degrees. The roughness caused distortion in the measured depth profiles of nitrogen and the major component elements. However, the above roughness and the distortion in the depth profiles can be eliminated by using a 250 eV O-2(+) beam at an angle of incidence above 80 degrees. Depth profile analyses with a 250 eV 83 degrees O-2(+) beam exhibited minimal surface roughening and insignificant variation in the secondary ion yield of SiN- from SiO2 bulk to the SiO2/Si interface, facilitating an accurate analysis of nitrogen distribution in a SiO2/Si stack. In addition, depth profiles of the major component elements such as O-18(-) and Si-28(-) delivered clear information on the location of the SiO2/Si interface. Using the new approach, we compared nitrogen distribution in thin SiNO films with the decoupled-plasma nitridation (DPN) at various powers. Copyright (c) 2008 John Wiley & Sons, Ltd.
机译：超薄氮氧化物薄膜中氮的深度剖面分析具有良好的精度，对于过程开发和常规过程监控而言是理想的。低能量SIMS是在氮氧化薄膜的准确表征中获得成功的技术之一。这项工作使用当前的SIMS技术研究了典型的氮气深度剖面分析中的伪影，以及通过选择最佳分析条件来提高准确性的方法。结果表明，当SiO2 / Si叠层被O-2（+）束以250 eV入射角和70至79度的入射角轰击时，表面粗糙度迅速增长。粗糙度导致测得的氮和主要组成元素的深度剖面变形。但是，可以通过使用入射角大于80度的250 eV O-2（+）光束消除上述粗糙度和深度轮廓中的变形。用250 eV 83度O-2（+）束进行的深度剖面分析显示出最小的表面粗糙度和从SiO2块到SiO2 / Si界面的SiN-的二次离子产率的微不足道的变化，从而有助于对氮气中的氮分布进行精确分析。 SiO2 / Si叠层。此外，诸如O-18（-）和Si-28（-）之类的主要组成元素的深度剖面提供了有关SiO2 / Si界面位置的清晰信息。使用新方法，我们比较了在不同功率下SiNO薄膜中的氮分布与去耦等离子体氮化（DPN）。版权所有（c）2008 John Wiley＆Sons，Ltd.

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