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首页> 外文期刊>Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films >Characterization of AlN thin film prepared by reactive sputtering
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Characterization of AlN thin film prepared by reactive sputtering

机译：反应溅射制备AlN薄膜的表征

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摘要

AlN films with a preferred orientation <002> have been prepared on Si(100) substrates via DC reactive magnetron sputtering. X-ray diffraction, atomic force microscopy, scanning electron microscopy, ellipsometer, and ultraviolet-visible-near infrared (UV-VIS-NIR) spectrophotometer were used to investigate the structural and optical properties of the AlN thin films. When the sputtering pressure is about 0.4Pa, the flow ratio between nitrogen and argon is 1:3, and the growth temperature is 400 degrees C, the transmissivity of the AlN film is about 90% in the visible and near-infrared region, and its optical band gap is similar to 5.84eV. The refractive index of the thin films is about 2.05, which is lower than the bulk AlN refractive index. Copyright (c) 2016 John Wiley & Sons, Ltd.
机译：已经通过DC反应磁控溅射在Si（100）衬底上制备了具有优选取向<002>的AlN膜。利用X射线衍射，原子力显微镜，扫描电子显微镜，椭圆仪和紫外可见近红外（UV-VIS-NIR）分光光度计研究了AlN薄膜的结构和光学性质。当溅射压力约为0.4Pa时，氮气与氩气的流量比为1：3，并且生长温度为400摄氏度，AlN膜在可见光和近红外区域的透射率约为90％，并且它的光学带隙类似于5.84eV。薄膜的折射率约为2.05，低于整体AlN折射率。版权所有（c）2016 John Wiley＆Sons，Ltd.

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