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首页> 外文期刊>Chinese science bulletin >Electron density of austenite/martensite biphase interface
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Electron density of austenite/martensite biphase interface

机译：奥氏体/马氏体双相界面的电子密度

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摘要

Biphase interface exists in both complex phase alloy and composite. Improvement of the interface between the matrix and the second phase has become an important task in material research. In recent years, the models of strong interface connection andweak interface connection and the strengthening mechanism of the matrix and the reinforcer matching are advanced in composite researches. They are also suitable for complex phase alloys. These researches deal with interface physics and interface chemistry as well as the atom structures and electron states of interface. Cheng Kaijia indicated, that normal TFD model is imperfect in the fields of material design, electron transfer, etc. There seem to be some mistakes in the treatment of atom conditions, especially the boundary condition between atoms in solid, Correct boundary condition does exist, but it has not been found out as yet. He also pointed out that the boundary condition between atoms is just a continuity of electron density, because this is the condition of a continuous wave function, as required by quantum mechanics. According to this thought, in this note we calculate the electron distribution on austenite/martensite (A/M) interface with Yu's theory and prove the continuity of its averagecovalent electron density (CED) under the first order approximation which is in accord with the boundary condition in "Cheng's theory", thus providing a method of calculating the CED of biphase interface, and verifying that "improved TFD model can serveas a probe in solid electron theory research.
机译：复相合金和复合材料中都存在双相界面。改善基质与第二相之间的界面已成为材料研究的重要任务。近年来，在复合材料研究中，提出了强接口连接和弱接口连接的模型以及基体的增强机理和增强剂的匹配。它们也适用于复杂相合金。这些研究涉及界面物理和界面化学以及界面的原子结构和电子态。程凯佳指出，正常的TFD模型在材料设计，电子转移等领域是不完善的。在原子条件的处理方面似乎存在一些错误，尤其是固体中原子之间的边界条件，确实存在正确的边界条件，但尚未发现。他还指出，原子之间的边界条件只是电子密度的连续性，因为这是量子力学要求的连续波函数的条件。根据这一思想，在本说明中，我们根据Yu的理论计算了奥氏体/马氏体（A / M）界面上的电子分布，并证明了在与边界一致的一阶近似下其平均共价电子密度（CED）的连续性在“ Cheng's theory”的条件下，从而提供了一种计算双相界面CED的方法，并验证了“改进的TFD模型可以作为固体电子理论研究的一个探索”。

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