Valence offsets of ternary alloy heterojunctions In_xGa_(1-x)As/In_xAl_(1-x)As

ZHENG Jincheng; ZHENG Yongmei; WANG Renzhi

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Valence offsets of ternary alloy heterojunctions In_xGa_(1-x)As/In_xAl_(1-x)As

机译：三元合金异质结In_xGa_（1-x）As / In_xAl_（1-x）As的价位偏移

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The ternary alloy heterojunctions In_xGa_(1-x)As/In_xAl_(1-x)As are important materials which have been widely used in microwave and photoelectric devices. The alloy heterojunctions In_xGa_(1-x)As/In_xAl_(1-x)As (x = 0.3) have great potential use in high electron mobility transistors (HEMTs), heterostructure insulated-gate FFTs (HIGFETs) and resonant tunneling diodes (RTDs). When x rises to 0.53, In_xGa_(1-x)As/In_xAl_(1-x)As can be widely used in the high-speed electronic devices. The valence-band offset (the value of ΔE_v) at semiconductor heterointerface is a key parameter for electronic properties of heterojunction and superlattice, which has great significance in theoretical calculation and experimental research.

机译：三元合金异质结In_xGa_（1-x）As / In_xAl_（1-x）As是重要的材料，已广泛用于微波和光电器件中。合金异质结In_xGa_（1-x）As / In_xAl_（1-x）As（x = 0.3）在高电子迁移率晶体管（HEMT），异质结构绝缘栅FFT（HIGFET）和谐振隧道二极管（RTD）中具有巨大的潜力）。当x上升到0.53时，In_xGa_（1-x）As / In_xAl_（1-x）As可以广泛用于高速电子设备中。半导体异质界面上的价带偏移（ΔE_v的值）是异质结和超晶格电子性质的关键参数，在理论计算和实验研究中具有重要意义。

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《Chinese science bulletin》 |1996年第24期|共4页
作者
ZHENG Jincheng; ZHENG Yongmei; WANG Renzhi;
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正文语种 eng
中图分类自然科学现状及发展;
关键词
heterojunction; valence-band offset; average-bond-energy theory;

机译：异质结价带偏移平均键能理论;

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专利

1. Valence offsets of ternary alloy heterojunctions In_xGa_(1-x)As/In_xAl_(1-x)As [J] . ZHENG Jincheng, ZHENG Yongmei, WANG Renzhi Chinese science bulletin . 1996,第24期

机译：三元合金异质结In_xGa_（1-x）As / In_xAl_（1-x）As的价位偏移
2. First-principles investigation of lattice constants and bowing parameters in wurtzite Al_xGa_(1-x)N, In_xGa_(1-x)N and In_xAl_(1-x)N alloys [J] . Z Dridi, B Bouhafs, P Ruterana Semiconductor science and technology . 2003,第9期

机译：纤锌矿Al_xGa_（1-x）N，In_xGa_（1-x）N和In_xAl_（1-x）N合金的晶格常数和弯曲参数的第一性原理研究
3. Ab initio calculation of optical properties with excitonic effects in wurtzite In_xGa_(1-x)N and In_xAl_(1-x)N alloys [J] . Luiz Claudio de Carvalho, Andre Schleife, Juergen Furthmueller, Physical review . 2013,第19期

机译：纤锌矿In_xGa_（1-x）N和In_xAl_（1-x）N合金中具有激子效应的光学性质从头算
4. Lattice-matched In_xGa_(1-x)As/In_xAl_(1-x)As quantum wells (x = 0.18 and 0.19) grown on (4 1 1)A- and (1 00)-oriented InGaAs ternary substrates by molecular beam epitaxy [C] . Satoshi Hiyamizu, Kazuo Nakajima, Takahiro Kitada, International conference on molecular beam epitaxy . 2001

机译：用分子束外延产生的量子阱（x xAl_（1-x）作为量子孔（x = 0.18和0.19）作为量子孔（x = 0.18和0.19），通过分子束外延生长（411） - 和（1 00）的Ingaas三元基质
5. A THERMODYNAMIC INVESTIGATION OF THE TERNARY ALLOY ((MERCURY(1-X)CADMIUM(X))(Y)TELLURIUM(1-Y) USING VAPOR PHASE SPECTROSCOPY. [D] . SCHWARTZ, JOHN PHILIP. 1977

机译：三元合金（（汞（1-X）镉（X））（碲）碲（1-Y）的气相热学热力学研究。
6. Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy [O] . Caihong Jia, Yonghai Chen, Yan Guo, 2011

机译：X射线光电子能谱法测量InN / BaTiO3异质结的价带偏移
7. Valence band offsets of ScxGa1-xN/AlN and ScxGa1-xN/GaN heterojunctions [O] . Tsui H.C.L., Goff L.E., Palgrave R.G., 2016

机译：sc x Ga 1-x N / alN的价带偏移和sc x Ga 1-x N / GaN异质结
8. Conduction- and Valence-Band Energies in Bulk InAs(1-x)Sb(x) and Type II InAs(1-x) Sb(x)/InAs Strained-Layer Superlattices. [R] . Lin, Y., Wang, D., Donetsky, D., 2013

机译：体Inas（1-x）sb（x）和II型Inas（1-x）sb（x）/ Inas应变层超晶格中的导带和价带能量。

Valence offsets of ternary alloy heterojunctions In_xGa_(1-x)As/In_xAl_(1-x)As

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