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首页> 外文期刊>Carbon: An International Journal Sponsored by the American Carbon Society >Fabrication of self-defined gated field emission devices on silicon substrates using PECVD-grown carbon nano-tubes
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Fabrication of self-defined gated field emission devices on silicon substrates using PECVD-grown carbon nano-tubes

机译：使用PECVD生长的碳纳米管在硅基板上制造自定义栅控场发射器件

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摘要

Fabrication of novel self-defined gated field-emission devices on silicon substrates using vertically grown carbon nano-tubes (CNT) is reported. Carbon nano-tubes are grown in a PECVD reactor from the Ni catalyst islands at a pressure of 1.6 Torr with a mixture of C_2H_2 and H_2 gases with 5 and 30 seem flows, respectively. The growth occurs at temperatures ranging between 550 and 650 deg C and CNT's are electrically isolated by a TiO_2 film. Silver is used as the metal gate and complete fabrication of transistors requires removing the insulating layer from top of the tip followed by one step of plasma as hing. With a voltage applied between gate and the cathode electrode, the emission current from cathode to anode shows a significant drop, indicating proper control of gate on the anode current.
机译：报道了使用垂直生长的碳纳米管（CNT）在硅衬底上制造新型的自定义栅控场发射器件。在PECVD反应器中，碳纳米管从Ni催化剂岛在1.6托的压力下分别以5sccm和30sccm的C_2H_2和H_2气体的混合物生长。生长发生在550到650摄氏度的温度范围内，并且CNT通过TiO_2薄膜电隔离。银被用作金属栅极，晶体管的完整制造需要从尖端的顶部去除绝缘层，然后进行一步等离子铰接。在栅极和阴极之间施加电压后，从阴极到阳极的发射电流会显着下降，这表明对阳极电流的栅极进行了适当的控制。

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