Fabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga_2O_3/BN films on Si substrate

XUE Chengshan; WU Yuxin; ZHUANG Huizhao

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Fabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga_2O_3/BN films on Si substrate

机译：通过氨化硅衬底上的Ga_2O_3 / BN薄膜制备的GaN纳米线的制备和光致发光

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GaN nanowires were successfully prepared on Si(111) substrate through ammoniating Ga_2O_3/BN films deposited by radio frequency magnetron sputtering system. The synthesized nanowires were confirmed as hexagonal wurtzite GaN by X-ray diffraction, selected-area electron diffraction and Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy revealed that the grown GaN nanowires have a smooth and clean surface with diameters ranging from 40 to 160 nm and lengths typically up to several tens of micrometers. The representative photolumi-nescence spectrum at room temperature exhibited a strong UV light emission band centered at 363 nm and a relative weak purple light emission peak at 422 nm. The growth mechanism is discussed briefly.

机译：通过将射频磁控溅射系统沉积的Ga_2O_3 / BN薄膜氨化，在Si（111）衬底上成功制备了GaN纳米线。通过X射线衍射，选择区域电子衍射和傅立叶变换红外光谱确认合成的纳米线为六方纤锌矿型GaN。扫描电子显微镜和透射电子显微镜显示，生长的GaN纳米线具有光滑和清洁的表面，其直径范围为40至160nm，长度通常高达数十微米。室温下的代表性光致发光光谱显示出以363 nm为中心的强UV发光带和在422 nm处相对较弱的紫色发光峰。简要讨论了增长机制。

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《Chinese science bulletin》 |2006年第14期|共4页
作者
XUE Chengshan; WU Yuxin; ZHUANG Huizhao;
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正文语种 eng
中图分类自然科学现状及发展;
关键词
magnetron sputtering; GaN nanowires; photolumines-cence;

机译：磁控溅射;GaN纳米线;光致发光;

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1. Fabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga_2O_3/BN films on Si substrate [J] . XUE Chengshan, WU Yuxin, ZHUANG Huizhao Chinese science bulletin . 2006,第14期

机译：通过氨化硅衬底上的Ga_2O_3 / BN薄膜制备的GaN纳米线的制备和光致发光
2. Fabrication, Morphology, And Photoluminescence Properties Of Gan Nanowires And Nanorods By Ammoniating Ga_2o_3/v Films On Si(111) [J] . Zhaozhu Yang, Chengshan Xue, Huizhao Zhuang, Applied Surface Science . 2008,第13期

机译：通过在Si（111）上氨化Ga_2o_3 / v膜来制备Gan纳米线和纳米棒的制备，形态和光致发光性质
3. Fabrication of GaN nanowires by ammoniating Ga_2O_3/NiCl_2 films deposited on Si substrates [J] . Chengshan Xue, Ying Wang, Huizhao Zhuang Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2009,第1a2期

机译：通过氨化沉积在Si衬底上的Ga_2O_3 / NiCl_2膜来制备GaN纳米线
4. Growth of c-GaN films on the nitridated β-Ga_2O_3 substrates using RF-MBE [C] . Tsutomu Araki, Chiharu Morioka, Junichi Wada, Symposium on GaN, AIN, InN and Related Materials . 2006

机译：使用RF-MBE在氮化β-GA_2O_3基材上的C-GaN膜的生长
5. Characterization of GaN thin films grown by RF Magnetron Sputtering for fabrication of an AlGaN/GaN HEMT biosensor [D] . Garza, Rocio Yolanda 2014

机译：射频磁控溅射生长的GaN薄膜的特性用于制造AlGaN / GaN HEMT生物传感器
6. Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate [O] . Xianqi Wei, Ranran Zhao, Minghui Shao, 2013

机译：Si（111）衬底上ZnO / GaN异质结构纳米柱状薄膜的制备及性能
7. Synthesis of Large-scale GaN Nanowires by Ammoniating Ga2O3/V Films [O] . Zhaozhu Yang, Chengshan Xue, Huizhao Zhuang, 2009

机译：通过氨化Ga2O3 / V膜来合成大规模GaN纳米线

Fabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga_2O_3/BN films on Si substrate

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