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首页> 外文期刊>Zeitschrift fur Physik, B. Condensed Matter >Competing bulk and surface fields in d = 2 Ising films near bulk criticality: effects of fluctuations
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Competing bulk and surface fields in d = 2 Ising films near bulk criticality: effects of fluctuations

机译：d = 2 Ising薄膜中接近体积临界的竞争体和表面场：涨落的影响

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摘要

The two-dimensional Ising films L * ∞ with bulk H and surface H_1 fields of opposite sign are studied above and close to bulk criticality by the density matrix renormalization group method. This technique, applied recently to d = 2 Ising films, allows for very accurate results for the adsorption Γ as a function of the reduced deviation from the critical temperature τ. For strong H_1 three distinct classes of shapes of Γ(τ), determined by the value of the parameter τ_H ～ (|H|L)~(1/(Δ-ν)), where L is the width of the film, are found in agreement with earlier predictions [A. Maciolek, A. Ciach, R. Evans, J. Chem. Phys. 108, 9765 (1998)]. For strong and for weak bulk fields Γ(τ) is a monotonic function, increasing for strong H and decreasing for weak H, in agreement with scaling analysis and earlier mean-field results. For H between these extreme cases Γ(τ) assumes a maximum for τ ～ τ_H and for τ < τ_H a depletion occurs, as in recent experiments for critical adsorption in porous materials. For a limited range of H a qualitatively new behavior of Γ(τ) is found. In addition to a maximum, a minimum of Γ(τ) for τ ～ L~(-1/ν) < τH appears, which in the mean-field analysis was absent.
机译：通过密度矩阵重归一化群方法，研究了具有大体H和相反符号的表面H_1场的二维Ising膜L *∞，并且接近大体临界。这项技术最近应用于d = 2 Ising薄膜，根据与临界温度τ的偏差减小，可以得出非常准确的吸附结果。对于强H_1，由参数τ_H〜（| H | L）〜（1 /（Δ-ν））的值（其中L是膜的宽度）确定的Γ（τ）的三种不同形状的形状为发现与早期的预测一致[A. Maciolek，A.Ciach，R.Evans，J.Chem。物理108，9765（1998）]。对于强场和弱场，Γ（τ）是单调函数，对于强H而言增加，对于弱H而言减少，这与比例分析和较早的平均场结果一致。对于这两种极端情况下的H，Γ（τ）假定为τ〜τ_H的最大值，而对于τ<τ_H则发生耗竭，正如最近在多孔材料中进行临界吸附的实验中一样。对于有限的H范围，发现了定性的Γ（τ）新行为。除了最大值外，还出现了τ〜L〜（-1 /ν）<τH的最小Γ（τ），在均值场分析中不存在。

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