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首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Effect of deposition conditions and substrate position on the properties of superconducting YBa{sub}2Cu{sub}3O{sub}δ thin films prepared in a facing-target sputtering system
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Effect of deposition conditions and substrate position on the properties of superconducting YBa{sub}2Cu{sub}3O{sub}δ thin films prepared in a facing-target sputtering system

机译：沉积条件和衬底位置对面对靶溅射系统中制备的超导YBa {sub} 2Cu {sub} 3O {sub}δ薄膜性能的影响

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摘要

Superconducting YBa{sub}2Cu{sub}8O{sub}δ thin films were grown using a facing-target sputtering technique with a special substrate holder designed to produce a high oxygen partial pressure around the growing film. There existed a complementaryeffect of discharge gas pressure, power and substrate position for optimizing the deposition conditions. For the pressure range of 9-200 m Torr, a high transition. temperature (T{sub}c) could be obtained at a given pressure by choice of substrateposition. At low deposition pressure the substrate needed to be away from the plasma because of the resputtering effect from energetic O{sup}- ions, while at high pressure the substrate was close to the plasma as gas scattering reduced their effect. Highquality films with a c-axis oriented epitaxial structure and lattice constant c{sub}o of 1.170-1.172 nm of stoichiometric composition, and smooth morphology were grown on (100) MgO in the pressure range of 70-90 m Torr. The as-deposited films had arelative resistance R(300K)/R(100K) of about 3, a transition temperature T{sub}c of 88 K and transition width of about 2 k.
机译：使用面向靶溅射技术和特殊衬底支架来生长超导YBa {sub} 2Cu {sub} 8O {sub}δ薄膜，该衬底支架设计为在生长膜周围产生高氧分压。为了优化沉积条件，存在排气压力，功率和基板位置的互补效应。对于9-200 m Torr的压力范围，过渡很高。通过选择底物位置可以在给定压力下获得温度（T {sub} c）。在低沉积压力下，由于高能Os离子的再溅射效应，基板需要远离等离子体，而在高压下，由于气体散射降低了其作用，基板靠近等离子体。在（100）MgO上于70-90 m Torr的压力范围内生长高质量的薄膜，该薄膜具有c轴取向的外延结构，晶格常数c {o为1.170-1.172 nm的化学计量组成，并且具有光滑的形态。所沉积的膜具有约3的相对电阻R（300K）/ R（100K），88K的转变温度T {c和约2k的转变宽度。

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