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首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Effect of sputtering gas pressure and nitrogen concentration on crystal orientation and residual stress in sputtered AlN films
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Effect of sputtering gas pressure and nitrogen concentration on crystal orientation and residual stress in sputtered AlN films

机译：溅射气压和氮浓度对溅射AlN薄膜晶体取向和残余应力的影响

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摘要

The crystal orientation and residual stress in sputtered AIN films were investigated by X-ray diffraction. The AIN films were deposited on a glass substrate by direct current (DC) and radio frequency (RF) planar magnetron sputtering system at mixed gas of argon and nitrogen under various sputtering gas pressures (P) and nitrogen concentrations (C-N). The following results were obtained: (1) the degree of the c-axis orientation of AIN films deposited by RF sputtering was superior to those produced by DC sputtering; (2) the degree of the c-axis orientation of AIN films was improved with decreasing P and increasing C-N; (3) in-plane large compressive stress was obtained at low P, and in-plane tensile stress was obtained at high P (P > 1.3 Pa); (4) film produced by DC sputtering at low P (P < 1 Pa) extensively included micro-cracks; and (5) in-plane tensile stress was obtained at low C-N and large compressive stress was obtained at C-N (C-N > 40 /N). (C) 2002 Elsevier Science Ltd. All rights reserved. [References: 21]
机译：通过X射线衍射研究了溅射的AIN膜中的晶体取向和残余应力。通过直流（DC）和射频（RF）平面磁控溅射系统，在各种溅射气体压力（P）和氮浓度（C-N）下，在氩气和氮气的混合气体下将AIN膜沉积在玻璃基板上。得到以下结果：（1）RF溅射沉积的AIN膜的c轴取向度优于DC溅射产生的c轴取向度。 （2）随着P的减少和C-N的增加，AlN薄膜的c轴取向度得到改善。 （3）在低P下获得平面内大压应力，在高P下获得平面内拉应力（P> 1.3 Pa）; （4）在低P（P <1 Pa）下通过直流溅射生产的薄膜广泛地包含了微裂纹; （5）在低C-N下获得面内拉应力，在C-N下获得大压应力（C-N> 40 / N）。 （C）2002 Elsevier ScienceLtd。保留所有权利。 [参考：21]

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