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首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >TEOS-PECVD system for high growth rate deposition of SiO2 films
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TEOS-PECVD system for high growth rate deposition of SiO2 films

机译：TEOS-PECVD系统用于高生长速率的SiO2膜沉积

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摘要

The Plasma-enhanced chemical vapour deposition (PECVD) system has been developed for the deposition of doped and undoped silicon dioxide (SiO2) films at high growth rates. The deposition chamber with symmetric parallel plate reactor has been designed and fabricated on the basis of some assumptions. The process parameters have been optimized for the growth Of SiO2 films. The films were deposited by present PECVD system using tetraethoxysilane (TEOS) as a source of Si and characterized by ellipsometery and FTIR spectroscopy. The comparative study of reactor geometry, process parameters and growth rate of present system with that of the PECVD systems reported in the literature has been presented. The growth rate obtained by our home-made system has found to be higher than that of the other reported PECVD systems. The positions of the characteristic peaks of the FTIR spectra, of the SiO2 films deposited by the present system have also been compared with that of the other systems and consistency has been observed, which proves the validity of the system. From comparison and experimental results it is revealed that the present PECVD system proved to yield high growth rates for the deposition of good-quality SiO2 films with higher thickness essential for optoelectronics applications. (c) 2005 Elsevier Ltd. All rights reserved.
机译：已开发出等离子体增强化学气相沉积（PECVD）系统，用于以高生长速率沉积掺杂和未掺杂的二氧化硅（SiO2）膜。具有对称平行板反应器的沉积室已根据一些假设进行了设计和制造。工艺参数已针对SiO2薄膜的生长进行了优化。通过使用四乙氧基硅烷（TEOS）作为Si源的现有PECVD系统沉积膜，并通过椭偏和FTIR光谱表征。已经提出了与现有文献报道的PECVD系统相比，本系统的反应器几何形状，工艺参数和生长速率的比较研究。我们的自制系统获得的增长率已经高于其他报告的PECVD系统。还比较了本系统沉积的SiO2薄膜的FTIR光谱特征峰的位置，并观察到一致性，证明了该系统的有效性。从比较和实验结果中可以看出，目前的PECVD系统被证明可产生高生长速率，以沉积具有较高厚度的高质量SiO2膜，这对于光电子应用是必不可少的。 （c）2005 Elsevier Ltd.保留所有权利。

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