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首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition
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Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition

机译：低温退火对脉冲激光沉积生长ZnO薄膜的结构和光学性能的影响

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摘要

ZnO thin films were deposited on glass substrates at room temperature (RT) similar to 500 degrees C by pulsed laser deposition (PLD) technique and then were annealed at 150-450 degrees C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results showed that the c-axis orientation of ZnO thin films was not destroyed by annealing treatments: the grain size increased and stress relaxed for the films deposited at 200-500 degrees C, and thin films densified for the films deposited at RT with increasing annealing temperature. The transmittance spectra indicated that E-g of thin films showed a decreased trend with annealing temperature. From the PL measurements, there was a general trend, that is UV emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 degrees C; no UV emission was observed for the films deposited at RT regardless of annealing treatment. Improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of UV emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of UV emission. It seems that annealing at lower temperature in air is an effective method to improve the UV emission for thin films deposited on glass substrate at substrate temperature above RT.
机译：ZnO薄膜通过脉冲激光沉积（PLD）技术在类似于500摄氏度的室温（RT）上沉积在玻璃基板上，然后在150-450摄氏度的空气中退火。通过XRD，SEM，透射光谱和光致发光（PL）研究了退火温度对在每个衬底温度下沉积的薄膜的微观结构和光学性能的影响。结果表明，ZnO薄膜的c轴取向没有被退火处理破坏：在200-500摄氏度下沉积的薄膜的晶粒尺寸增加，应力松弛，并且在RT下沉积的薄膜致密化。退火温度。透射光谱表明，薄膜的E-g随退火温度的升高而降低。从PL测量中，存在一个总体趋势，即在200-500摄氏度下沉积的薄膜在较低的退火温度下紫外线发射增强，而在较高的退火温度下紫外线发射消失。不论退火处理如何，在RT下沉积的膜均未观察到UV发射。随退火温度的提高，晶粒尺寸和化学计量比的改善可归因于紫外线发射的增强，但认为薄膜表面和晶界上吸附的氧物种有助于消除紫外线发射。似乎在空气中较低的温度下退火是一种有效的方法，可以提高在高于室温的基板温度下沉积在玻璃基板上的薄膜的紫外线发射。

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