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首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >A novel precursor system and its application to produce tin doped indium oxide
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A novel precursor system and its application to produce tin doped indium oxide

机译：新型前驱体系统及其在生产锡掺杂氧化铟中的应用

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摘要

A new type of precursor has been developed by molecular design and synthesised to produce tin doped indium oxide (ITO). The precursor consists of a newly developed bimetallic indium tin alkoxide, Me_2In(O ~tBu)_3Sn (Me = CH_3, OtBu = OC(CH _3)_3), which is in equilibrium with an excess of Me _2In(OtBu). This quasi single-source precursor is applied in a sol-gel process to produce powders and coatings of ITO using a one-step heat treatment process under an inert atmosphere. The main advantage of this system is the simple heat treatment that leads to the disproportionation of the bivalent Sn(ii) precursor into Sn(iv) and metallic tin, resulting in an overall reduced state of the metal in the final tin doped indium oxide (ITO) material, hence avoiding the usually necessary reduction step. Solid state 119Sn-NMR measurements of powder samples confirm the appearance of Sn(ii) in an amorphous gel state and of metallic tin after annealing under nitrogen. The corresponding preparation of ITO coatings by spin coating on glass leads to transparent conductive layers with a high transmittance of visible light and a low electrical resistivity without the necessity of a reduction step.
机译：通过分子设计已经开发了一种新型的前驱体，并进行了合成以生产掺杂锡的氧化铟（ITO）。前体由新开发的双金属铟锡醇盐Me_2In（O〜tBu）_3Sn（Me = CH_3，OtBu = OC（CH _3）_3）组成，并且与过量的Me _2In（OtBu）处于平衡状态。准单源前体通过溶胶-凝胶工艺施加，以一步法在惰性气氛下进行热处理，从而生产ITO粉末和涂层。该系统的主要优点是简单的热处理，可导致二价Sn（ii）前驱体歧化为Sn（iv）和金属锡，从而导致最终锡掺杂氧化铟中金属的整体还原态（ ITO）材料，因此避免了通常必要的还原步骤。粉末样品的固态119Sn-NMR测量证实了在无定形凝胶状态下Sn（ii）的出现以及在氮气中退火后金属锡的出现。通过在玻璃上旋涂来相应地制备ITO涂层，从而导致透明导电层具有高可见光透射率和低电阻率，而无需还原步骤。

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