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首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >Defect-pit-assisted growth of GaN nanostructures: nanowires, nanorods and nanobelts
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Defect-pit-assisted growth of GaN nanostructures: nanowires, nanorods and nanobelts

机译：GaN纳米结构的缺陷坑辅助生长：纳米线，纳米棒和纳米带

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摘要

A new method using defect-pit-assisted growth technology to successfully synthesize the high-quality single crystalline GaN nanostructures by ammoniating Ga2O3 films was proposed in this paper. During the ammoniating process, the amorphous middle buffer layer may unavoidably produce some defects and dislocations. Some defect pits come out, which have the lowest surface energy and can subsequently be used as a mask/template or act as potential nucleation sites to fabricate the GaN actinomorphic nanostructures. The as-prepared products are characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The results indicate that all the reflections of the samples can be indexed to the hexagonal GaN phase and the clear lattice fringes in HRTEM further confirm the growth of high-quality single-crystal GaN nanostructures. The SEM images show that the nanostructures have been realized under different experimental conditions exhibiting different shapes: nanowires, nanorods, and nanobelts. No particles or other nanostructures are found in the SEM study, demonstrating that the product possesses pure nanostructures. These nanostructures show a very good emission peak at 366 nm, which will have a good advantage for applications in laser devices using one-dimensional structures. Finally, the growth mechanism is also briefly discussed.
机译：提出了一种利用缺陷坑辅助生长技术通过氨化Ga2O3薄膜成功合成高质量单晶GaN纳米结构的新方法。在氨化过程中，非晶态中间缓冲层可能不可避免地产生一些缺陷和位错。会出现一些缺陷坑，这些坑具有最低的表面能，可以随后用作掩模/模板或充当潜在的成核位点，以制造GaN放线型纳米结构。所制备的产品通过X射线衍射（XRD），傅立叶变换红外光谱（FTIR），扫描电子显微镜（SEM）和高分辨率透射电子显微镜（HRTEM）进行表征。结果表明，样品的所有反射都可以指向六角形的GaN相，HRTEM中的清晰晶格条纹进一步证实了高质量单晶GaN纳米结构的生长。 SEM图像表明，纳米结构是在不同的实验条件下实现的，呈现出不同的形状：纳米线，纳米棒和纳米带。在SEM研究中未发现任何颗粒或其他纳米结构，表明该产品具有纯纳米结构。这些纳米结构在366 nm处显示出非常好的发射峰，这对于使用一维结构的激光设备的应用将具有很好的优势。最后，还简要讨论了增长机制。

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