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首页> 外文期刊>Journal de Physique, IV: Proceedings of International Conference >MOSFET modeling and parameter extraction for low temperature analog circuit design
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MOSFET modeling and parameter extraction for low temperature analog circuit design

机译：用于低温模拟电路设计的MOSFET建模和参数提取

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摘要

SPICE parameters needed for simulation of CMOS readout circuits used in infrared image sensors cooled at low temperature are extracted using a specific MOSFET model based on the EKV 2.6 compact charge model. It is used below 200 K and is very well adapted to analog simulation in weak and moderate inversion regimes. It was successively applied on different CMOS processes from different foundries. The model's performance is demonstrated in this work for a 0.35 μm N~+ single gate process. Experimental results on the evolution of the low frequency noise and the transistor matching parameters between 300 K and 77 K are also presented. Contrary to the NMOS transistors, the threshold voltage differences of buried channel PMOS transistors are less scattered as the temperature is lowered. The same trend with temperature is observed on the flicker noise parameter.
机译：使用基于EKV 2.6紧凑电荷模型的特定MOSFET模型，提取了用于低温冷却的红外图像传感器中的CMOS读出电路的仿真所需的SPICE参数。它在200 K以下使用，非常适合弱和中等反演范围内的模拟仿真。它先后应用于来自不同铸造厂的不同CMOS工艺。在这项工作中以0.35μmN〜+单栅极工艺证明了该模型的性能。还给出了低频噪声的演变以及在300 K和77 K之间的晶体管匹配参数的实验结果。与NMOS晶体管相反，随着温度降低，掩埋沟道PMOS晶体管的阈值电压差分散程度较小。在闪烁噪声参数上观察到温度的相同趋势。

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