Influence of processing parameters on characteristics of sol-gel derived PLZT thin films

B. Malic; N. Setter; K. Brooks; M. Kosec; G. Drazic

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Influence of processing parameters on characteristics of sol-gel derived PLZT thin films

机译：工艺参数对溶胶-凝胶法制备PLZT薄膜特性的影响

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PLZT x/65/35 (x = 4, 8, 10) thin films were prepared by the acetic-acid based chemical solution deposition processing from lead tetraacetate, lanthanum nitrate and zirconium and titanium propoxides. Introducing top layer of PLZT with large PbO excess can prevent surface pyrochlore phase formation. It is further shown that although lead is depleted from PLZT because of the reaction with the substrate, perovskite phase is retained as a consequence of a large lead-oxide content throughout the film.

机译：PLZT x / 65/35（x = 4、8、10）薄膜是通过乙酸基化学溶液沉积工艺由四乙酸铅，硝酸镧，锆和丙氧化钛制成的。引入过量PbO的PLZT顶层可以防止表面烧绿石相的形成。进一步表明，尽管由于与底物的反应铅从PLZT中耗尽，但由于整个薄膜中大量的氧化铅含量，钙钛矿相得以保留。

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《Journal de Physique, IV: Proceedings of International Conference》 |1998年第9期|共4页
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B. Malic; N. Setter; K. Brooks; M. Kosec; G. Drazic;
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1. Influence of processing parameters on characteristics of sol-gel derived PLZT thin films [J] . B. Malic, N. Setter, K. Brooks, Journal de Physique, IV: Proceedings of International Conference . 1998,第9期

机译：工艺参数对溶胶-凝胶法制备PLZT薄膜特性的影响
2. Influence of the process parameters on the structural and electric properties of ferroelectric and antiferroelectric PZT thin films realized on stainless steel by a Sol-gel derived method [J] . Raynald Seveno, Hartmut Gundel Journal of Sol-Gel Science and Technology . 2007,第1期

机译：工艺参数对通过Sol-gel衍生法在不锈钢上实现的铁电和反铁电PZT薄膜的结构和电性能的影响
3. Electrical and optical properties of PLZT thin films on ITO coated glass by sol-gel processing [J] . HYUNG-WOOK CHOI, YONG SEO PARK, J. DOUGHERTY Journal of Materials Science . 2000,第6期

机译：溶胶-凝胶法在ITO涂层玻璃上PLZT薄膜的电学和光学性质
4. Fabrication and characteristics of PLZT thin films derived from MOD process [C] . Yong Zhang, Xiyun He, Pingsun Qiu, Thin Film Physics and Applications . 2004

机译：MOD法制备PLZT薄膜及其特性
5. Nanofabrication, characterization and electrical properties of sol-gel derived ferroelectric PLZT 7/65/35 ceramic thin films and fibers. [D] . Seth, Vinay Kumar. 1989

机译：溶胶-凝胶衍生的铁电PLZT 7/65/35陶瓷薄膜和纤维的纳米加工，表征和电性能。
6. Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process [O] . Chao-Feng Liu, Xin-Gui Tang, Lun-Quan Wang, 2019

机译：溶胶-凝胶法制备的云母基板上HfO2薄膜的电阻转换特性
7. In-plane dielectric characterization of sol-gel derived PLZT (9/65/35) thin films using an interdigital electrode configuration [O] . Wang DY, Cheng YL, Wang J, 2005

机译：使用叉指电极配置对溶胶-凝胶衍生的PLZT（9/65/35）薄膜进行面内介电表征
8. Influence of Processing Variables on Physical Properties of Sol-Gel Derived TiO sub 2 Films [R] . Frydrych, W. S. , Ferris, K. F. , Exarhos, G. J. 1987

机译：加工变量对溶胶 - 凝胶衍生TiO sub 2薄膜物理性质的影响

Influence of processing parameters on characteristics of sol-gel derived PLZT thin films

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