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Effect of Annealing on Electrical Conductivity and Morphology of Polyaniline Films

机译:退火对聚苯胺薄膜电导率和形貌的影响

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We report structure-property relationships of polyaniline emeraldine base (EB) films that were produced by combining different processing steps in various sequences. The effect of annealing and doping processes on the surface structure of the films was investigated by atomic force microscopy (AFM), and the corresponding changes to the chemical structure of the EB films were monitored by Fourier transform infrared spectroscopy. AFM results indicate that after doping polyaniline (EB) films with HCl, the root mean square (rms) roughness of the surface of EB film increased approx 46%. When the doped polyaniline (EB) films were annealed, no electrical conductivity was observed. When these films were redoped, only approx 6% of the initial conductivity could be recovered. in another processing sequence in which the po9lyaniline (EB) films were first annealed and then doped, the electrical conductivity was only approdx 12% relative to the film that was doped immediately after being cast. From this work, a strategy to reduce the surface roughness of films made from electrically conducting polyaniline (EB) is proposed.
机译:我们报告了聚苯胺翡翠碱(EB)膜的结构-性能关系,这些膜是通过将不同的加工步骤按各种顺序组合而制成的。通过原子力显微镜(AFM)研究了退火和掺杂工艺对薄膜表面结构的影响,并通过傅里叶变换红外光谱法监测了EB薄膜化学结构的相应变化。 AFM结果表明,用HCl掺杂聚苯胺(EB)膜后,EB膜表面的均方根(rms)粗糙度增加了约46%。将掺杂的聚苯胺(EB)薄膜退火时,未观察到导电性。重新贴上这些薄膜时,只能恢复到大约6%的初始电导率。在另一处理顺序中,首先对聚苯胺(EB)薄膜进行退火,然后对其进行掺杂,相对于刚浇铸后立即掺杂的薄膜,电导率仅为约12%。通过这项工作,提出了一种减少导电聚苯胺(EB)制成的薄膜表面粗糙度的策略。

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