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首页> 外文期刊>Journal of Applied Polymer Science >Silylated poly(4-hydroxystyrene)s as negative electron beam resists
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Silylated poly(4-hydroxystyrene)s as negative electron beam resists

机译：甲硅烷基化聚（4-羟基苯乙烯）作为负电子束抗蚀剂

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Silylated poly(4-hydroxystyrene)s and radical polymerized 4-tert-butyldimethylsilyloxystyrene (TBDMSOSt) were examined as electron beam resists. Commercial poly(4-hydroxystyrene) (PHS) with M-w = 1.69 x 10(4) and M-w/M-n = 5.41 was silylated with 1-(trimethylsilyl)imidazole and tert-butylchlorodimethylsilane. Both silylation reactions proceeded quantitatively to afford trimethylsilylated PHS with M-w = 3.93 x 10(4) and M-w/M-n = 4.91, and tert-butyldimethylsilylated PHS with M-w = 4.08 x 10(4) and M-w/M-n = 3.81. These 2 silyl ether polymers acted as a negative working resist to electron beam (EB) exposure. Sensitivity and contrast of tert-butyldimethylsilylated PHS were not affected by prebake temperature around its T-g of 97 degrees C, while those of PHS were dependent on prebake temperature around its T-g of 160 degrees C. At a prebake temperature of 125 degrees C, the sensitivity parameter D-g(0.5) and the contrast gamma value were obtained as follows: 3.93 x 10(-4) C cm(-2) and 0.91 for PHS; 1.49 x 10(-4) C cm(-2) and 1.06 for trimethylsilylated PHS; 1.84 x 10(-4) C cm(-2) and 1.44 for tert-butyldimethylsilylated PHS. The silylation procedures obviously improved the sensitivity of PHS. TBDMSOSt was polymerized in bulk at 60 degrees C with 2,2'-azobisisobutyronitrile (AIBN) as an initiator. The resultant poly(TBDMSOSt) possessed M-w = 3.01 x 10(5) and M-w/M-n = 1.92 and exhibited a sensitivity D-g(0.5) of 1.60 x 10(-5) C cm(-2) and a gamma value of 1.47. More than 10 times enhancement of sensitivity was observed compared with tert-butyldimethylsilylated PHS. Such a high sensitivity is probably due to the high molecular weight of the bulk polymerized material. Poly(TBDMSOSt) resolved an isolated line of 0.20 mu m width and 0.5 mu m line and space patterns. (C) 1998 John Wiley & Sons, Inc. [References: 10]
机译：作为电子束抗蚀剂，研究了甲硅烷基化的聚（4-羟基苯乙烯）和自由基聚合的4-叔丁基二甲基甲硅烷基氧基苯乙烯（TBDMSOSt）。将M-w ＝ 1.69×10（4）和M-w / M-n ＝ 5.41的市售聚（4-羟基苯乙烯）（PHS）与1-（三甲基甲硅烷基）咪唑和叔丁基氯二甲基硅烷硅烷化。两次甲硅烷基化反应均进行定量，得到M-w = 3.93 x 10（4）和M-w / M-n = 4.91的三甲基甲硅烷基化PHS和M-w = 4.08 x 10（4）和M-w / M-n = 3.81的叔丁基二甲基甲硅烷基化PHS。这两种甲硅烷基醚聚合物充当电子束（EB）曝光的负性工作抗蚀剂。叔丁基二甲基甲硅烷基化PHS的灵敏度和对比度不受其97℃Tg左右的预烘烤温度的影响，而PHS的灵敏度和对比度则受其160℃Tg左右的预烘烤温度的影响。在125℃的预烘烤温度下，灵敏度如下获得参数Dg（0.5）和对比度γ值：3.93×10（-4）C cm（-2）和0.91对于PHS;三甲基甲硅烷基化PHS的1.49 x 10（-4）C cm（-2）和1.06;对于叔丁基二甲基甲硅烷基化的PHS为1.84 x 10（-4）C cm（-2）和1.44。甲硅烷基化程序明显提高了PHS的灵敏度。在2，2'-偶氮二异丁腈（AIBN）作为引发剂的条件下，TBDMSOSt在60摄氏度下本体聚合。所得的聚（TBDMSOSt）具有M-w ＝ 3.01×10（5）和M-w / M-n ＝ 1.92，并显示出1.60×10（-5）C cm（-2）的灵敏度D-g（0.5）和伽马值为1.47。与叔丁基二甲基甲硅烷基化的PHS相比，灵敏度提高了10倍以上。如此高的灵敏度可能是由于本体聚合材料的高分子量。聚（TBDMSOSt）解析出一条0.20微米宽度和0.5微米线条和空间图案的隔离线。 （C）1998 John Wiley＆Sons，Inc. [参考：10]

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