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首页> 外文期刊>Journal of Applied Polymer Science >THE EFFECT OF FILM THICKNESS ON CONTACT ELECTRIFICATION
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THE EFFECT OF FILM THICKNESS ON CONTACT ELECTRIFICATION

机译：膜厚对接触电的影响

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Contact electrification experiments have been performed for the purpose of studying the effect of varying film thickness on charge transfer during metal-insulator contact. Thin films of plasma polymerized methane are deposited on silicon substrates using a magnetically enhanced glow discharge system. Film uniformity across the wafer is verified by ellipsometric techniques. Variations in film thickness from approximately 100 to 600 Angstrom result in a variable amount of charge transfer when the films come in contact with a metal probe. Charging of the polymer film increases with increasing him thickness up to a limiting thickness of approximately 375-400 Angstrom. Similar results are obtained when various substrate treatments are performed previous to film deposition and charge measurements are obtained as a function of film thickness. Contact electrification measurements show the metal-insulator contact is influenced by the insulator/substrate interface up to the same limiting film thickness (375-400 Angstrom). The instrumentation used in this series of experiments is based on measurement of the currents associated with the contact and subsequent separation of the surface state systems of a metal and an insulating polymer. This technique relies on measurement of currents in the picoampere range and appears to be a novel method to experimentally determine charge penetration depth. (C) 1996 John Wiley & Sons, Inc. [References: 29]
机译：为了研究在金属-绝缘体接触期间膜厚度变化对电荷转移的影响，已经进行了接触带电实验。使用磁增强辉光放电系统，将等离子聚合甲烷薄膜沉积在硅基板上。通过椭圆偏振技术验证了整个晶片上的薄膜均匀性。当薄膜与金属探针接触时，薄膜厚度从大约100到600埃不等，导致电荷转移量可变。聚合物膜的电荷随着厚度的增加而增加，直至达到约375-400埃的极限厚度。当在薄膜沉积之前执行各种基板处理，并且获得的电荷测量值是薄膜厚度的函数时，可以获得类似的结果。接触带电测量表明，直到相同的极限膜厚度（375-400埃），金属-绝缘体的接触都会受到绝缘体/基底界面的影响。在这一系列实验中使用的仪器是基于与接触相关的电流的测量以及随后金属和绝缘聚合物的表面状态系统的分离。该技术依赖于皮安级范围内电流的测量，并且似乎是一种通过实验确定电荷穿透深度的新颖方法。 （C）1996 John Wiley＆Sons，Inc. [参考：29]

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