Photoluminescence of Yb~(3+)-doped CuInS_2 single crystals prepared by In-flux and chemical vapor transport methods

Nf. Tsujii; Y. Imamaka; T. Takamasu

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Photoluminescence of Yb~(3+)-doped CuInS_2 single crystals prepared by In-flux and chemical vapor transport methods

机译：In-flux和化学气相传输法制备的掺Yb〜（3+）的CuInS_2单晶的光致发光

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We xi have grown bulk single crystals of Yb-doped CuInS_2 by In-flux and chemical vapor transport methods, and have studied their magnetic and optical properties. Magnetic susceptibility measurements reveal that the concentrations of Yb actually doped are in the range of 1 x 10~(18)to 3 x 10~(19) cm~_3, one order of magnitude smaller than the nominal concentrations. Photoluminescence from the Yb~(3+ )center has been clearly observed at low temperatures. The spectra shapes show that the Yb ions occupy crystallographically one site. The crystals grown by the chemical vapor transport exhibited most pronounced luminescence from the Yb center.

机译：我们通过In-flux和化学气相传输方法生长了掺Yb的CuInS_2块状单晶，并研究了它们的磁性和光学性质。磁化率测量表明，实际掺杂的Yb的浓度在1 x 10〜（18）至3 x 10〜（19）cm__3的范围内，比标称浓度小一个数量级。在低温下已经清楚地观察到了来自Yb〜（3+）中心的光致发光。光谱形状表明，Yb离子在晶体学上占据一个位点。通过化学气相传输生长的晶体从Yb中心显示出最明显的发光。

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《Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics》 |2006年第0期|共5页
作者
Nf. Tsujii; Y. Imamaka; T. Takamasu;
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正文语种 eng
中图分类合金学与各种性质合金;
关键词
Semiconductors; Crystal growth; Impurities in semiconductors; Luminescence;

机译：半导体;晶体生长;半导体中的杂质;发光;

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1. Photoluminescence of Yb~(3+)-doped CuInS_2 single crystals prepared by In-flux and chemical vapor transport methods [J] . Nf. Tsujii, Y. Imamaka, T. Takamasu Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2006,第0期

机译：In-flux和化学气相传输法制备的掺Yb〜（3+）的CuInS_2单晶的光致发光
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Photoluminescence of Yb~(3+)-doped CuInS_2 single crystals prepared by In-flux and chemical vapor transport methods

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