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首页> 外文期刊>Journal of Electronic Materials >Thermoelectric Performance of Bi0.5Sb1.5Te3/Sb Composites Fabricated by Electroless Plating and Spark Plasma Sintering
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Thermoelectric Performance of Bi0.5Sb1.5Te3/Sb Composites Fabricated by Electroless Plating and Spark Plasma Sintering

机译：化学镀和火花等离子体烧结制备Bi0.5Sb1.5Te3 / Sb复合材料的热电性能

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摘要

This study reports semi-metal/semi-conductor composites with enhanced thermoelectric performance that results from interface effects between Sb clusters and the Bi0.5Sb1.5Te3 matrix. The Sb clusters were dispersed on the surface of Bi0.5Sb1.5Te3 powders by electroless plating and then the powders were rapidly compacted by spark plasma sintering at 673 K and 50 MPa. The thermoelectric properties for Bi0.5Sb1.5Te3 and Bi0.5Sb1.5Te3/Sb bulk samples were measured in the temperature range of 300 K to 500 K. The electrical conductivity of Bi0.5Sb1.5Te3/Sb composites was enhanced at room temperature due to the increase in carrier concentration with increasing Sb content. The enhancement in the power factor of Bi0.5Sb1.5Te3/Sb composites was due to a high Seebeck coefficient at high measured temperature. Moreover, the Sb clusters acted as effective phonon scattering centers, which decreased the lattice thermal conductivity at high temperature. In comparison with Bi0.5Sb1.5Te3, the maximum value of ZT for Bi0.5Sb1.5Te3/Sb (2.8 wt.%) samples was enhanced from 0.21 to 0.54 at 500 K. Consequently, the optimal operation temperature of Bi0.5Sb1.5Te3/Sb composites shifted to higher temperature compared to that for Bi0.5Sb1.5Te3 bulk.
机译：这项研究报告了由Sb团簇​​与Bi0.5Sb1.5Te3基质之间的界面效应产生的具有增强的热电性能的半金属/半导体复合材料。通过化学镀将Sb簇分散在Bi0.5Sb1.5Te3粉末的表面上，然后通过在673 K和50 MPa下的火花等离子体烧结将粉末快速压实。在300 K至500 K的温度范围内测量了Bi0.5Sb1.5Te3和Bi0.5Sb1.5Te3 / Sb块状样品的热电性能。由于室温，Bi0.5Sb1.5Te3 / Sb复合材料的电导率得以提高随着Sb含量的增加，载流子浓度增加。 Bi0.5Sb1.5Te3 / Sb复合材料的功率因数提高是由于在较高的测量温度下具有较高的塞贝克系数。此外，Sb团簇充当有效的声子散射中心，从而降低了高温下的晶格热导率。与Bi0.5Sb1.5Te3相比，Bi0.5Sb1.5Te3 / Sb（2.8 wt。％）样品的ZT最大值在500 K下从0.21增加到0.54。因此，Bi0.5Sb1的最佳操作温度。与Bi0.5Sb1.5Te3本体相比，5Te3 / Sb复合材料的温度更高。

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