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Secondary Ion Mass Spectrometry and Time-of-Flight Secondary Ion Mass Spectrometry Study of Impurity Measurements in HgCdTe

机译:HgCdTe中杂质测量的二次离子质谱和飞行时间二次离子质谱研究

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摘要

In this study,time-of-flight(TOF)secondary ion mass spectrometry(SIMS)was compared against dynamic SIMS to determine detection limits and background levels for nine impurities:Li,Na,K,Al,Ni,As,In,Fe,and Cu.Statistics were gathered by measuring six material test structure samples from six different liquid phase epitaxy(LPE)HgCdTe double layer hetero-junction(DLHJ)wafers.Also included is a comparison between dynamic SIMS and TOF-SIMS capabilities.
机译:在这项研究中,将飞行时间(TOF)二次离子质谱(SIMS)与动态SIMS进行了比较,以确定9种杂质:Li,Na,K,Al,Ni,As,In,Fe的检测限和背景水平通过测量来自六个不同液相外延(LPE)HgCdTe双层异质结(DLHJ)晶片的六个材料测试结构样本来收集统计数据。还包括动态SIMS和TOF-SIMS功能之间的比较。

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