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首页> 外文期刊>Journal of Electronic Materials >Development of Metallic Hermetic Sealing for MEMS Packaging for Harsh Environment Applications
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Development of Metallic Hermetic Sealing for MEMS Packaging for Harsh Environment Applications

机译：恶劣环境下用于MEMS封装的金属气密密封的开发

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Hermetic sealing of microelectromechanical system sensors is indispensable to ensure their reliable operation and also to provide protection during fabrication. This work proposes two prospective candidates for hermetic sealing for rugged environment applications, i.e., Al-Ge and Pt-In. Al-Ge was chosen due to its compatibility with complementary metal-oxide-semiconductor technology. Pt-In possesses the highest remelting temperature among all the solder systems, which is desired for high-temperature applications in both the energy and aerospace industries. The various bonding parameters for Al-Ge eutectic bonding and Pt-In transient liquid-phase (TLP) bonding have been optimized, and their influence on the bond quality is reported. Optimization of bonding parameters has been carried out with the objective of ensuring void-free bonds. A new configuration for stacking Al-Ge thin films has been demonstrated to tackle the issue of loss of Ge prior to bonding, since native Ge oxides are soluble in deionized water. The impact of solid-state aging prior to Al-Ge eutectic bonding has been investigated. The method of tailoring the phases in the Pt-In joint is also discussed. The prospects and constraints of eutectic and TLP bonding from the hermeticity perspective are discussed in detail. Furthermore, changes in the microstructure under aging at 300 deg C up to 500 h and the resulting influence on the mechanical properties are presented. The overall finding of this work is that Al-Ge can achieve better mechanical and hermetic performance for high-temperature applications.
机译：微机电系统传感器的气密密封是必不可少的，以确保其可靠的运行并在制造过程中提供保护。这项工作提出了用于恶劣环境应用的气密密封的两种潜在候选材料，即Al-Ge和Pt-In。选择Al-Ge是因为它与互补金属氧化物半导体技术兼容。 Pt-In具有所有焊料系统中最高的重熔温度，这是能源和航空航天工业中高温应用所希望的。优化了Al-Ge共晶键合和Pt-In瞬态液相（TLP）键合的各种键合参数，并报道了它们对键合质量的影响。为了确保无空隙的结合，已经进行了结合参数的优化。已经证明，用于堆叠Al-Ge薄膜的新配置可解决键合之前Ge损失的问题，因为天然的Ge氧化物可溶于去离子水中。已经研究了Al-Ge共晶键合之前固态时效的影响。还讨论了在Pt-In接头中调整相位的方法。从气密性的角度详细讨论了共晶和TLP键合的前景和局限性。此外，还介绍了在300℃至500 h时效下的显微组织变化及其对机械性能的影响。这项工作的总体发现是，Al-Ge可以在高温应用中实现更好的机械和密封性能。

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