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首页> 外文期刊>Journal of Electronic Materials >Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates
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Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates

机译：低缺陷GaN衬底上MBE生长的晶格匹配的AlInN / GaN和应变AlGaN / GaN异质结构中的近红外吸收

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摘要

We have investigated near-infrared absorption and photocurrent in lattice-matched AlInN/GaN and strained AlGaN/GaN heterostructures grown by molecular-beam epitaxy (MBE) on low-defect GaN substrates for infrared device applications. The AlGaN/GaN heterostructures were grown under Ga-rich conditions at 745 deg C. Material characterization via atomic force microscopy and high-resolution x-ray diffraction indicates that the AlGaN/GaN heterostructures have smooth and well-defined interfaces. A minimum full-width at half-maximum of 92 meV was obtained for the width of the intersubband absorption peak at 675 meV of a 13.7 A GaN/27.5 A Al_(0.47)Ga_(0.53)N superlattice. The variation of the intersubband absorption energy across a 1 cm X 1 cm wafer was +- 1percent. An AlGaN/GaN-based electromodulated absorption device and a quantum well infrared detector were also fabricated. Using electromodulated absorption spectroscopy, the full-width at half-maximum of the absorption peak was reduced by 33percent compared with the direct absorption measurement. This demonstrates the suitability of the electromodulated absorption technique for determining the intrinsic width of intersubband transitions. The detector displayed a peak responsivity of 195 (mu)A/W at 614 meV (2.02 (mu)m) without bias. Optimal MBE growth conditions for lattice-matched AlInN on low-defect GaN substrates were also studied as a function of total metal flux and growth temperature. A maximum growth rate of 3.8 nm/min was achieved while maintaining a high level of material quality. Intersubband absorption in AlInN/GaN superlattices was observed at 430 meV with full-width at half-maximum of 142 meV. Theoretical calculations of the intersubband absorption energies were found to be in agreement with the experimental results for both AlGaN/GaN and AlInN/GaN heterostructures.
机译：我们已经研究了晶格匹配的AlInN / GaN和通过分子束外延（MBE）在低缺陷GaN衬底上生长的应变AlGaN / GaN异质结构在红外器件应用中的近红外吸收和光电流。 AlGaN / GaN异质结构是在745摄氏度的富Ga条件下生长的。通过原子力显微镜和高分辨率X射线衍射进行的材料表征表明，AlGaN / GaN异质结构具有平滑且定义明确的界面。对于13.7 A GaN / 27.5 A Al_（0.47）Ga_（0.53）N超晶格的675 meV的子带间吸收峰的宽度，获得了半峰最大的最小全宽为92 meV。跨1 cm X 1 cm晶片的子带间吸收能量的变化为+ 1％。还制造了基于AlGaN / GaN的电调制吸收装置和量子阱红外检测器。使用电调制吸收光谱法，与直接吸收测量相比，吸收峰的半峰全宽降低了33％。这证明了电调制吸收技术适合确定子带间跃迁的固有宽度。该检测器在614 meV（2.02μm）的偏压下显示了195μA/ W的峰值响应度。还研究了低缺陷GaN衬底上晶格匹配的AlInN的最佳MBE生长条件，它是总金属通量和生长温度的函数。在保持高水平材料质量的同时，达到了3.8 nm / min的最大生长速率。在430 meV处观察到AlInN / GaN超晶格的子带间吸收，半峰全宽为142 meV。发现子带间吸收能的理论计算与AlGaN / GaN和AlInN / GaN异质结构的实验结果一致。

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