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首页> 外文期刊>Journal of Experimental and Theoretical Physics >Electron-hole balance and semiconductor properties of quasi-one-dimensional charge-density-wave conductors
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Electron-hole balance and semiconductor properties of quasi-one-dimensional charge-density-wave conductors

机译：准一维电荷密度波导体的电子-空穴平衡和半导体性质

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The position of the chemical potential fi and the temperature dependence of the charge-density-wave vector q(T), which determine the type of conduction (the sign of the charge carriers) in the semiconductor state of quasi-one-dimensional conductors below the Peierls transition temperature, are calculated. The results obtained differ from the calculations previously performed. The temperature dependences of the conductivity, the thermopower, and the Hall coefficient, as well as the temperature hysteresis of the first two parameters, are discussed with consideration of the relationship between the linear electron and hole concentrations n and p per conducting chain and the magnitude of the charge-density-wave vector ir(p-n) = q(T) -q(Q). It is shown that because of the dependence of q on T, the activation dependence of the conductivity a ?. exp(-A/7) is maintained even in the limit of unipolar conduction {n>p or pi>ri), which does not have any analogy in ordinary semiconductors.
机译：化学势fi的位置和电荷密度波矢量q（T）的温度依赖性，决定了下面准一维导体的半导体状态下的导电类型（电荷载流子的符号）计算Peierls转变温度。获得的结果与之前执行的计算不同。讨论了电导率，热功率和霍尔系数的温度依赖性，以及前两个参数的温度滞后，并考虑了每个导电链上线性电子与空穴浓度n和p之间的关系以及幅度电荷密度波矢量ir（pn）= q（T）-q（Q）。可以看出，由于q对T的依赖性，电导率α的活化依赖性。即使在单极传导的极限（n> p或pi> ri）中，exp（-A / 7）也保持不变，这在普通半导体中没有任何类比。

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