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首页> 外文期刊>Journal of Experimental and Theoretical Physics >Carrier Capture and Recombination in CdSe/ZnSe Quantum Dots
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Carrier Capture and Recombination in CdSe/ZnSe Quantum Dots

机译：CdSe / ZnSe量子点中的载流子捕获和复合

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摘要

Time-resolved photoluminescence (PL) spectra of self-assembled CdSe/ZnSe quantum dots (QDs) are measured with a view to identifying the QD-size dependence of carrier capture and recombination in a single QD. The PL is excited by optical absorption in the ZnSe barrier layers under weak and strong irradiation with femto- and nanosecond laser pulses, respectively. In the case of weak excitation, the PL dynamics observed in a QD and the barrier layers are attributed to (i) fast carrier diffusion in the barrier layers, (ii) intense capture of carriers by the QD, (iii) fast carrier relaxation to the QD ground state, and (iv) dependence of the carrier capture and recombination times on the QD size. In the case of strong excitation, PL spectra are measured for different levels of excitation intensity and PL intensity is examined as a function of excitation intensity. It is established that (i) an increase in excitation intensity has a stronger effect on a high-frequency part of the spectrum and (ii) the intensity characteristic is essentially nonlinear. These findings are explained by state filling and/or decrease in carrier capture rate as the QD becomes increasingly full.
机译：测量自组装CdSe / ZnSe量子点（QD）的时间分辨光致发光（PL）光谱，以识别单个QD中载流子捕获和重组的QD尺寸依赖性。在飞秒和纳秒激光脉冲的弱和强照射下，ZnSe阻挡层中的光吸收分别激发了PL。在弱激发的情况下，在QD和势垒层中观察到的PL动力学归因于（i）势垒层中载流子的快速扩散，（ii）QD对载流子的强烈捕获，（iii）载流子快速弛豫到QD基态，以及（iv）载流子捕获和重组时间对QD大小的依赖性。在强激发的情况下，针对不同强度的激发强度测量PL光谱，并将PL强度作为激发强度的函数进行检查。已经确定，（i）激发强度的增加对频谱的高频部分具有更强的影响，并且（ii）强度特性基本上是非线性的。这些发现可以通过状态填充和/或随着QD变得越来越满而载流子捕获率降低来解释。

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