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首页> 外文期刊>Journal of Experimental and Theoretical Physics >Optical anisotropy of InAs/GaSb broken-gap quantum wells
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Optical anisotropy of InAs/GaSb broken-gap quantum wells

机译：InAs / GaSb裂隙量子阱的光学各向异性

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摘要

We investigate in detail the optical anisotropy of absorption of linearly polarized light in InAs/GaSb quantum wells grown on GaSb along the [001] direction, which can be used as an active region of different laser structures. The energy level positions, the wave functions, the optical matrix elements, and the absorption coefficients are calculated using the eightband kp model and the Burt-Foreman envelope function theory. In these calculations, the Schr?dinger and Poisson equations are solved self-consistently taking the lattice-mismatched strain into account. We find that a realistic Hamiltonian, which has the C _(2v) symmetry, results in considerable anisotropy of optical matrix elements for different directions of light polarization and different directions of the initial-state in-plane wave vector, including low-symmetry directions. We trace how the optical matrix elements and absorption are modified when spin-orbit interaction and important symmetry breaking mechanisms are taken into account (structural inversion asymmetry, bulk inversion asymmetry, and interface Hamiltonian). These mechanisms result in an almost 100% anisotropy of the absorption coefficients as the light polarization vector rotates in the plane of the structure and in a plane normal to the interfaces.
机译：我们详细研究了沿[001]方向生长在GaSb上的InAs / GaSb量子阱中线性偏振光吸收的光学各向异性，该各向异性可以用作不同激光结构的有源区域。使用八波段kp模型和Burt-Foreman包络函数理论计算能级位置，波函数，光学矩阵元素和吸收系数。在这些计算中，考虑到晶格失配应变，可以自洽地求解薛定？方程和泊松方程。我们发现具有C _（2v）对称性的逼真的哈密顿量导致光学矩阵元素在不同的光偏振方向和初始状态的面内波矢量的不同方向（包括低对称方向）上具有相当大的各向异性。我们追踪当自旋轨道相互作用和重要的对称破坏机制（结构反演不对称，体反演不对称和界面哈密顿量）被考虑时如何改变光学矩阵元素和吸收率。当光偏振矢量在结构平面和垂直于界面的平面中旋转时，这些机制导致吸收系数的各向异性几乎达到100％。

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